MCP98244 datasheet(4/52 Pages) MICROCHIP

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MCP98244

DS20002327D-page 4

 2012-2022 Microchip Technology Inc. and its subsidiaries

TEMPERATURE CHARACTERISTICS

MCP98244 EEPROM DC CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, VDD = 1.7V to 3.6V, GND = Ground,

and TA = -40°C to +125°C.

Parameters

Sym

Min

Typ

Max

Unit

Conditions

Current, EEPROM write (for tWC)IDD_EE

—

250

2000

µA

Sensor in Shutdown mode

Current, EEPROM read

IDD_EE

—

100

500

µA

Write Cycle time (byte/page)

tWC

—3

Endurance TA = +25°C

—

cycles Write Cycles, VDD = 3.3V (Note 1, Note 2)

EEPROM Write Temperature

EEWRITE

0—

°C

EEPROM Read Temperature

EEREAD

-40

—

125

°C

For minimum read temperature, see Note 1

Write Protect Voltage

SWP and CWP Voltage

VHV

—

Applied at A0 pin

Note 1: Characterized but not production tested.

2: For endurance estimates in a specific application, please consult the Total Endurance™ Model, which can

be obtained from Microchip’s web site at www.microchip.com/TotalEndurance.

INPUT/OUTPUT PIN DC CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, VDD = 1.7V to 3.6V, GND = Ground and

TA = -40°C to +125°C.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Serial Input/Output (SCL, SDA, A0, A1, A2)

Input

High-Level Voltage

VIH

0.7VDD

——

Low-Level Voltage

VIL

——

0.3VDD

Input Current

IIN

—

±5

µA

SDA and SCL only

Input Impedance (A0, A1, A2)

ZIN

—1

—



VIN > VIH

Input Impedance (A0, A1, A2)

ZIN

—200

—



VIN < VIL

Output (SDA only)

Low-Level Voltage

VOL

——

0.4

IOL= 3 mA

High-Level Current (leakage)

IOH

——

µA

VOH = VDD

Low-Level Current

IOL

—

VOL = 0.4V; VDD ≥ 2.2V

6—

—

VOL = 0.6V

Capacitance

CIN

—5

—

SDA and SCL Inputs

Hysteresis

VHYST

—

0.05VDD

—V

Spike Suppression

TSP

—

Electrical Specifications: Unless otherwise indicated, VDD = 1.7V to 3.6V, GND = Ground,

and TA = -40°C to +125°C.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Temperature Ranges

Specified Temperature Range

-40

—

+125

°C

Note 1

Operating Temperature Range

-40

—

+125

°C

Storage Temperature Range

-65

—

+150

°C

Thermal Package Resistances

Thermal Resistance, 8L-TDFN

JA

—52.5

—

°C/W

Note 1: Operation in this range must not cause TJ to exceed Maximum Junction Temperature (+150°C).

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