BUX84 datasheet(6/12 Pages) PHILIPS

Part #	BUX84

Description	Silicon diffused power transistors

PDF	12 Pages

Scroll/Zoom	100%

Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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6 / 12 page

1997 Aug 13

Philips Semiconductors

Product speciﬁcation

Silicon diffused power transistors

BUX84; BUX85

Fig.5 Forward bias SOAR.

BUX85.

Tmb ≤ 50 °C.

I - Region of permissible DC operation.

II - Permissible extension for repetitive pulse operation.

III - Area of permissible operation during turn-on in single transistor converters, provided RBE ≤ 100 Ω and tp ≤ 0.6 µs.

IV - Repetitive pulse operation in this region is permissible provided VBE ≤ 0 and tp ≤ 2 ms.

(1) Ptot max and Ptot peak max lines.

(2) Second breakdown limits.

handbook, full pagewidth

MGB939

102

103

104

VCE (V)

10−1

10−3

10−2

(A)

δ = 0.01

1 ms

2 ms

5 ms

µs

100

µs

200

µs

500

µs

tp =

µs

III

(2)

(1)

IC max

ICM max

10 ms

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