BUX84 datasheet(3/12 Pages) PHILIPS

3 / 12 page

1997 Aug 13

Philips Semiconductors

Product speciﬁcation

Silicon diffused power transistors

BUX84; BUX85

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCESM

collector-emitter peak voltage

VBE =0

BUX84

−

800

BUX85

−

1000

VCEO

collector-emitter voltage

open base

BUX84

−

400

BUX85

−

450

collector current (DC)

see Figs 4 and 5

−

ICM

collector current (peak value)

tp = 2 ms; see Figs 4 and 5

−

base current (DC)

−

0.75

IBM

base current (peak value)

−

IBM

base current (reversed; peak value) turn-off current

−−1A

Ptot

total power dissipation

Tmb ≤ 25 °C; see Fig.8

−

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCEOsust

collector-emitter sustaining voltage

IC = 100 mA; IBoff =0;

L = 25 mH; see Figs 2 and 3

BUX84

400

−−

BUX85

450

−−

VCEsat

collector-emitter saturation voltage

IC = 0.3 A; IB =30mA;

see Fig.7

−−

0.8

IC = 1 A; IB = 200 mA; see Fig.7 −−

VBEsat

base-emitter saturation voltage

IC = 1 A; IB = 200 mA; see Fig.9 −−

1.1

ICES

collector-emitter cut-off current

VCEM =VCEMSmax; VBE =0;

note 1

−−

200

µA

VCEM =VCEMSmax; VBE =0;

Tj = 125 °C; note 1

−−

1.5

IEBO

emitter-base cut-off current

VEB =5V; IC =0

−−

1mA

hFE

DC current gain

VCE =5V; IC = 5 A; see Fig.10

−−

VCE =5V; IC = 100 mA;

see Fig.10

100

transition frequency

VCE =10V; IC = 200 mA;

f = 1 MHz

−

MHz

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