1997 Aug 13

2

Philips Semiconductors

Product specification

Silicon diffused power transistors

BUX84; BUX85

DESCRIPTION

High-voltage, high-speed,

glass-passivated NPN power

transistor in a TO-220AB package.

APPLICATIONS

• Converters

• Inverters

• Switching regulators

• Motor control systems

• Switching applications.

PINNING

PIN

DESCRIPTION

1

base

2

collector; connected to mounting base

3

emitter

Fig.1 Simplified outline (TO-220AB) and symbol.

MBK106

12 3

3

2

1

MBB008

QUICK REFERENCE DATA

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

collector-emitter peak voltage

BUX84

−

800

V

BUX85

−

1000

V

collector-emitter voltage

open base

BUX84

−

400

V

BUX85

−

450

V

collector-emitter saturation voltage

−

1V

collector current (DC)

see Figs 4 and 5

−

2A

collector current (peak value)

see Figs 4 and 5

−

3A

total power dissipation

−

40

W

fall time

resistive load; see Fig.11

0.4

−µs

SYMBOL

PARAMETER

VALUE

UNIT

thermal resistance from junction to mounting base

2.5

K/W

thermal resistance from junction to ambient in free air

70

K/W