BUX84 datasheet(4/12 Pages) PHILIPS

4 / 12 page

1997 Aug 13

Philips Semiconductors

Product speciﬁcation

Silicon diffused power transistors

BUX84; BUX85

Note

1. Measured with a half-sinewave voltage (curve tracer).

Switching times in horizontal deﬂection circuit (see Fig.11)

ton

turn-on time

ICon = 1 A; IBon = 200 mA;

IBoff = −400 mA; VCC = 250 V

−

0.2

0.5

µs

fall time

ICon = 1 A; IBon = 200 mA;

IBoff = −400 mA; VCC = 250 V

−

0.4

−µs

ICon = 1 A; IBon = 200 mA;

IBoff = −400 mA; VCC = 250 V;

Tmb =95 °C

−−

1.4

µs

storage time

ICon = 1 A; IBon = 200 mA;

IBoff = −400 mA; VCC = 250 V

−

3.5

µs

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Fig.2

Test circuit for collector-emitter

sustaining voltage.

andbook, halfpage

MGE252

+ 50 V

100 to 200

Ω

30 to 60 Hz

6 V

oscilloscope

vertical

horizontal

Ω

300

Ω

Fig.3

Oscilloscope display for collector-emitter

sustaining voltage.

handbook, halfpage

MGE239

(mA)

250

200

100

min

VCEOsust

VCE (V)

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