3A DDR TERMINATION REGULATOR

AP2302

Preliminary Datasheet

4

Jul. 2006 Rev. 1. 2

BCD Semiconductor Manufacturing Limited

Absolute Maximum Ratings (Note 1)

Recommended Operating Conditions

Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.

These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated

under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods

may affect device reliability.

Parameter

Symbol

Value

Unit

Supply Voltage for Internal Circuit

7V

Power Dissipation

Internally Limited

W

ESD (Human Body Model)

ESD

2

KV

Junction Temperature

150

Storage Temperature Range

-65 to 150

Lead Temperature (Soldering, 10sec)

260

Package Thermal Resistance (Free Air)

θ

JA

SOIC-8

160

TO-252-5L

130

TO-263-5L

90

Parameter

Symbol

Min

Typ

Max

Unit

Supply Voltage for Internal Circuit

3.36V

Power Input

DDR I

1.6

2.5

V

DDR II

1.8

Junction Temperature

0

125