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AM29LV033C Datasheet(PDF) 44 Page - Advanced Micro Devices

Part # AM29LV033C
Description  32 Megabit (4 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
PDF  49 Pages
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Manufacturer  AMD [Advanced Micro Devices]
Direct Link  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29LV033C Datasheet(HTML) 44 Page - Advanced Micro Devices

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Am29LV033C
22268B5 September 12, 2006
DA TA
SH EET
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°C, 3.0 V V
CC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, V
CC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four- or two-bus-cycle sequence for the program command. See
Table 9, on page 25 for further information on command definitions.
6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Includes all pins except V
CC. Test conditions: VCC = 3.0 V, one pin at a time.
TSOP PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A = 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.7
15
s
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
45
s
Byte Programming Time
9
300
µs
Excludes system level
overhead (Note 5)
Accelerated Byte Program Time
7
210
µs
Chip Programming Time (Note 3)
36
108
s
Description
Min
Max
Input voltage with respect to V
SS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS on all I/O pins
–1.0 V
V
CC + 1.0 V
V
CC Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN = 0
6
7.5
pF
C
OUT
Output Capacitance
V
OUT = 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN = 0
7.5
9
pF
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°C
10
Years
125
°C
20
Years



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