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AM29LV256MH103REF Datasheet(PDF) 33 Page - Advanced Micro Devices |
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AM29LV256MH103REF Datasheet(HTML) 33 Page - Advanced Micro Devices |
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33 / 69 page  December 16, 2005 Am29LV256M 31 D A TA SH EE T Table 8. Device Geometry Definition Addresses (x16) Data Description 27h 0019h Device Size = 2 N byte 28h 29h 0002h 0000h Flash Device Interface description (refer to CFI publication 100) 2Ah 2Bh 0005h 0000h Max. number of byte in multi-byte write = 2 N (00h = not supported) 2Ch 0001h Number of Erase Block Regions within device (01h = uniform device, 02h = boot device) 2Dh 2Eh 2Fh 30h 00FFh 0001h 0000h 0001h Erase Block Region 1 Information (refer to the CFI specification or CFI publication 100) 31h 32h 33h 34h 0000h 0000h 0000h 0000h Erase Block Region 2 Information (refer to CFI publication 100) 35h 36h 37h 38h 0000h 0000h 0000h 0000h Erase Block Region 3 Information (refer to CFI publication 100) 39h 3Ah 3Bh 3Ch 0000h 0000h 0000h 0000h Erase Block Region 4 Information (refer to CFI publication 100) |
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