AM29LV256MH103REF datasheet(69/69 Pages) AMD

69 / 69 page

December 16, 2005

Am29LV256M

D A TA SH EE T

Revision C+1 (May 28, 2003)

Global

Converted to full datasheet version.

Modified SecSi Sector Flash Memory Region section

to include ESN references.

Erase and Programming Performance

Input values into table that were previously TBD.

Modified notes.

CMOS Compatible

Corrected typos in table.

Erase and Program Operations and Alternate CE#

Controlled Erase and Program Operations

Changed the typical for the Accelerated Effective Write

Buffer Program Operation for Byte and Word to 6.25

and 12.5.

Revision C+2 (June 11, 2003)

Global

Modified speed grades available.

Revision C+3 (September 15, 2003)

Ordering Information

Added OPN note for ESN feature.

Tables 11 & 12 Command Definitions

Changed definition BA to XXX for Program/Erase Sus-

pend (Note 16) and for Program/Erase Resume (Note

17).

Program Suspend/Program Resume Command

Sequence

Removed - program suspended sector is required

when writing this command.

AC Characteristics - Hardware Reset

Added information for t

RB.

AC Characteristics - Erase and Program

Operations

Added information for t

BUSY.

Revision C + 4 (February 9, 2004)

Table 1 Device Bus Operations

Modified ACC column to replace instances of X to L/H.

Customer Lockable: SecSi Sector NOT

Programmed or Protected at the Factory

Removed second paragraph.

Enter SecSi Sector/Exit SecSi Sector Command

Sequence

Added (write buffer) to last sentence of first paragraph.

Write Buffer Programming

Removed last paragraph.

Table 10 & Table 12: Command Definitions

Replaced the Addr information Program/Erase Sus-

pend and Program/Erase Resume from BA to XXX.

Erase Suspend/Erase Resume Commands

Added note on flash device performance during

suspend/erase mode.

AC Characteristics - Erase and Program

Operations

Added t

POLL information.

AC Characteristics - Operation Timings Figures

Updated Figure 16: Program Operation Timings,

Figure 19: Data# Polling Timings (During Embedded

Algorithms, and Figure 24: Alternate CE# Controlled

Write (Erase/Program) Operation Timings.

Trademarks

Updated information.

Cover page and Title sheet

Added notation referencing superseding documenta-

tion.

Revision C + 5 (October 27, 2004)

Ordering Information Table

Added Pb-free ordering option

Revision C + 6 (December 16, 2005)

This product has been retired and is not available for

designs. For new and current designs, S29GL256N

supersedes Am29LV256M and is the factory-recom-

me nde d m i g r at ion pa th . Please refe r t o t h e

S29GL256N datasheet for specifications and ordering

information. Availability of this document is retained for

reference and historical purposes only.

Trademarks

AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.

ExpressFlash is a trademark of Advanced Micro Devices, Inc.

Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.

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