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AM29LV256MH103REF Datasheet(PDF) 37 Page - Advanced Micro Devices

Part # AM29LV256MH103REF
Description  256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
PDF  69 Pages
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Manufacturer  AMD [Advanced Micro Devices]
Direct Link  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29LV256MH103REF Datasheet(HTML) 37 Page - Advanced Micro Devices

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December 16, 2005
Am29LV256M
35
D A TA SH EE T
Load a value that is greater than the page buffer
size during the Number of Locations to Program
step.
Write to an address in a sector different than the
one specified during the Write-Buffer-Load com-
mand.
Write
an
Address/Data
pair
to
a
different
write-buffer-page than the one selected by the
Starting Address during the write buffer data load-
ing stage of the operation.
Write data other than the Confirm Command after
the specified number of data load cycles.
The abort condition is indicated by DQ1 = 1, DQ7 =
DATA# (for the last address location loaded), DQ6 =
toggle, and DQ5=0. A Write-to-Buffer-Abort Reset
command sequence must be written to reset the de-
vice for the next operation. Note that the full 3-cycle
Write-to-Buffer-Abort Reset command sequence is re-
quired when using Write-Buffer-Programming features
in Unlock Bypass mode.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
from “0” back to a “1.” Attempting to do so may
cause the device to set DQ5 = 1, or cause the DQ7
and DQ6 status bits to indicate the operation was suc-
cessful. However, a succeeding read will show that the
data is still “0.” Only erase operations can convert a “0”
to a “1.”
Accelerated Program
The device offers accelerated program operations
through the WP#/ACC pin. When the system asserts
V
HH on the WP#/ACC pin, the device automatically en-
ters the Unlock Bypass mode. The system may then
write the two-cycle Unlock Bypass program command
sequence. The device uses the higher voltage on the
WP#/ACC pin to accelerate the operation. Note that
the WP#/ACC pin must not be at V
HH for operations
other than accelerated programming, or device dam-
age may result. WP# has an internal pullup; when un-
connected, WP# is at V
IH.
Figure 5 illustrates the algorithm for the program oper-
ation. Refer to the Erase and Program Operations
table in the AC Characteristics section for parameters,
and Figure 16 for timing diagrams.



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