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AM29LV256MH103REF Datasheet(PDF) 61 Page - Advanced Micro Devices

Part # AM29LV256MH103REF
Description  256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
PDF  69 Pages
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Manufacturer  AMD [Advanced Micro Devices]
Direct Link  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29LV256MH103REF Datasheet(HTML) 61 Page - Advanced Micro Devices

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December 16, 2005
Am29LV256M
59
D A TA SH EE T
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. Word/Byte programming specification is based upon a single word/byte programming operation not utilizing the write buffer.
6. AC listed are tested with V
IO = VCC. Contact AMD for information on AC operation with VIO ≠ VCC.
7. When using the program suspend/resume feature, if the suspend command is issued within tPOLL, tPOLL must be fully re-applied
upon resuming the programming operation. If the suspend command is issued after t
POLL, tPOLL is not required again prior to
reading the status bits upon resuming.
Parameter
Speed Options
JEDEC
Std.
Description
103, 103R
113, 113R
123, 123R
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
100
110
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ELAX
t
AH
Address Hold Time
Min
45
ns
t
DVEH
t
DS
Data Setup Time
Min
45
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE# Pulse Width
Min
45
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
240
µs
Effective Write Buffer Program Operation
(Notes 2, 4)
Per Byte
Typ
7.5
µs
Per Word
Typ
15
µs
Effective Accelerated Write Buffer
Program Operation (Notes 2, 4)
Per Byte
Typ
6.25
µs
Per Word
Typ
12.5
µs
Single Byte/Word
Program Operation (Note 2, 5)
Byte
Typ
60
µs
Word
Typ
60
µs
Accelerated Single Byte/Word
Programming Operation
(Note 2, 5)
Byte
Typ
54
µs
Word
Typ
54
µs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
t
POLL
Program Valid before Status Polling (Note 7)
Max
4
µs



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