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AM29LV256MH103REF Datasheet(PDF) 62 Page - Advanced Micro Devices

Part # AM29LV256MH103REF
Description  256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
PDF  69 Pages
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Manufacturer  AMD [Advanced Micro Devices]
Direct Link  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29LV256MH103REF Datasheet(HTML) 62 Page - Advanced Micro Devices

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60
Am29LV256M
December 16, 2005
D A TA SH EE T
AC CHARACTERISTICS
LATCHUP CHARACTERISTICS
Note: Includes all pins except V
CC. Test conditions: VCC = 3.0 V, one pin at a time.
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS on all I/O pins
–1.0 V
V
CC + 1.0 V
V
CC Current
–100 mA
+100 mA
tGHEL
tWS
OE#
CE#
WE#
RESET#
tDS
Data
tAH
Addresses
tDH
tCP
DQ7#,
DOUT
tWC
tAS
tCPH
PA
Data# Polling
A0 for program
55 for erase
tRH
tWHWH1 or 2
RY/BY#
tWH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
tBUSY
DQ15
tPOLL
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. D
OUT is the data written to the device.
4. Waveforms are for the word mode.
Figure 24.
Alternate CE# Controlled Write (Erase/Program)
Operation Timings



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