33996 datasheet(16/23 Pages) FREESCALE

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Analog Integrated Circuit Device Data

Freescale Semiconductor

33996

TYPICAL APPLICATIONS

INTRODUCTION

calculated by multiplying the current area under the current

curve (IA) times the clamp voltage (VCL) (see Figure 13).

Characterization of the output clamps, using a single pulse

non-repetitive method at 0.3 A, indicates the maximum

energy to be 50 mJ at 150

°C junction temperature per output.

Figure 13. Output Voltage Clamping

Reverse Battery Protection

The 33996 device requires external reverse battery

protection on the VPWR pin.

All outputs consist of a power MOSFET with an integral

substrate diode. During reverse battery condition, current will

flow through the load via the substrate diode. Under this

circumstance relays may energize and lamps will turn on. If

load reverse battery protection is desired, a diode must be

placed in series with the load.

Overtemperature Fault

Overtemperature detect circuits are specifically

incorporated for each individual output. The shutdown

following an over temperature condition depends on the

control bit set in the Global Shutdown/Retry Control register.

Each independent output shuts down at 155°C to 180°C.

When an output shuts down due to an Overtemperature

Fault, no other outputs are affected. The MCU recognizes the

fault by a logic [1] in the Fault Status bit (bit 23 in the SO

Response register). After the 33996 has cooled below the

switch point temperature and 10°C hysteresis, the output will

function as defined by the shutdown/retry bit 17 in the Global

Shutdown/Retry Control register.

Curren t

Area (IA )

Clamp Energy

J = IA x V CL )

Drain Voltage

Time

Dr ain-to-Source C lamp

Voltage (VCL = 45 V)

Drain Current

D = 0.3 A)

GND

Dr ain-to-Source ON

Voltage (VDS (O N))

50 V)

Drain-to-Source Clamp

Voltage (VCL = 50 V)

Drain-to-Source ON

Voltage (VDS(ON))

Drain Voltage

Clamp Energy

(EJ = IAVG x VCL)

GND

Time

Drain Current

(ID = 0.3 A)

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