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33390 Datasheet(PDF) 5 Page - Freescale Semiconductor, Inc

Part # 33390
Description  Class B Serial Transceiver
PDF  15 Pages
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

33390 Datasheet(HTML) 5 Page - Freescale Semiconductor, Inc

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Analog Integrated Circuit Device Data
Freescale Semiconductor
5
33390
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics
Characteristics noted under conditions of 7.0 V
≤ V
BAT ≤ 16 V, -40°C ≤ TA ≤ 125°C, SLEEP = 5.0 V unless otherwise noted.
Typical values reflect the parameter's approximate midpoint average value with VBAT = 13 V, TA = 25°C. All positive currents are
into the pin. All negative currents are out of the pin.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER CONSUMPTION
Operational Battery Current (RMS with Tx = 7.812 kHz Square Wave)
BUS Load = 1380
Ω to GND, 3.6 nF to GND
BUS Load = 257
Ω to GND, 20.2 nF to GND
IBAT(OP1)
IBAT(OP2)
–
–
3.0
22.4
11.5
32
mA
Battery Bus Low Input Current
After SLEEP Toggle Low to High; Prior to Tx Toggling
After Tx Toggle High to Low
IBAT(BUS L1)
IBAT(BUS L2)
–
–
1.1
6.4
3.0
8.5
mA
Sleep State Battery Current
VSLEEP = 0 V
IBAT(SLEEP)
–
38.2
65
µA
BUS
BUS Input Receiver Threshold (6)
Threshold High (Bus Increasing until Rx
≥ 3.0 V)
Threshold Low (Bus Decreasing until Rx
≤ 3.0 V)
Threshold in Sleep State (SLEEP = 0 V)
Hysteresis (VBUS(IH) - VBUS(IL), SLEEP = 0 V)
VBUS(IH)
VBUS(IL)
BUSTH(SLEEP)
VBUS(HYST)
4.25
–
2.4
0.1
3.9
3.7
3.0
0.2
–
3.5
3.4
0.6
V
BUS-Out Voltage (257
Ω ≤ R
BUS(L) to GND ≤ 1380 Ω)
8.2 V
≤ V
BAT ≤ 16 V, Tx = 5.0 V
4.25 V
≤ V
BAT ≤ 8.2 V, Tx = 5.0 V
Tx = 0 V
VBUS(OUT1)
VBUS(OUT2)
VBUS(OUT3)
6.25
VBAT - 1.6
–
6.9
–
0.27
8.0
VBAT
0.7
V
BUS Short Circuit Output Current
Tx = 5.0 V, -2.0 V
≤ V
BUS ≤ 4.8 V
IBUS(SHORT)
60
129
170
mA
BUS Leakage Current
-2.0 V
≤ V
BUS ≤ 0 V
0 V
≤ V
BUS ≤ VBAT
IBUS(LEAK1)
IBUS(LEAK2)
-500
–
-55
189
–
500
µA
BUS Thermal Shutdown (7) (Tx = 5.0 V, IBUS = -0.1 mA)
Increase Temperature until VBUS ≤ 2.5 V
TBUS(LIM)
150
170
190
°C
BUS Thermal Shutdown Hysteresis (8)
TBUS(LIM) - TBUS(REEN)
TBUS(LIMHYS)
10
12
15
°C
BUS and LOAD Current with Loss of VBAT or GND (IBAT = 0 µA) (see
Figure 4)
-18 V
≤ V
BUS ≤ 9.0 V
-18 V
≤ V
LOAD ≤ 9.0 V
IBUS (LOSS)
ILOAD (LOSS)
–
–
0.00
0.00
0.1
0.1
mA
Notes
6.
Typical threshold value is the approximate actual occurring switch point value with VBAT = 13 V, TA = 25°C.
7.
Device characterized but not production tested for thermal shutdown.
8.
Device characterized but not production tested for thermal shutdown hysteresis.



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