33887 datasheet(10/37 Pages) FREESCALE

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Analog Integrated Circuit Device Data

Freescale Semiconductor

33887

ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHARACTERISTICS

POWER OUTPUTS (OUT1, OUT2)

Output ON-Resistance (18)

5.0 V

≤ V+ ≤ 28 V, T

J = 25°C

8.0 V

≤ V+ ≤ 28 V, T

J = 150°C

5.0 V

≤ V+ ≤ 8.0 V, T

J = 150°C

RDS(ON)

–

120

–

225

300

Ω

Active Current Limiting Threshold (via Internal Constant OFF-Time

PWM) on Low-Side MOSFETs (19)

ILIM

5.2

6.5

7.8

High-Side Short Circuit Detection Threshold

ISCH

–

Low-Side Short Circuit Detection Threshold

ISCL

8.0

–

Leakage Current (20)

VOUT = V+

VOUT = Ground

IOUT(LEAK)

–

100

200

µA

Output MOSFET Body Diode Forward Voltage Drop

IOUT = 3.0 A

–

2.0

Overtemperature Shutdown

Thermal Limit

Hysteresis

TLIM

THYS

175

–

225

°C

HIGH-SIDE CURRENT SENSE FEEDBACK

Feedback Current

IOUT = 0 mA

IOUT = 500 mA

IOUT = 1.5 A

IOUT = 3.0 A

IOUT = 6.0 A

IFB

–

1.07

3.6

7.2

14.4

–

1.33

4.0

8.0

600

1.68

4.62

9.24

18.48

µA

FAULT STATUS (21)

Fault Status Leakage Current (22)

VFS = 5.0 V

IFS(LEAK)

–

µA

Fault Status SET Voltage (23)

IFS = 300 µA

VFS(LOW)

–

1.0

Notes

Output-ON resistance as measured from output to V+ and ground.

Active current limitation applies only for the low-side MOSFETs.

Outputs switched OFF with D1 or D2.

Fault Status output is an open Drain output requiring a pull-up resistor to 5.0 V.

Fault Status Leakage Current is measured with Fault Status HIGH and not SET.

Fault Status Set Voltage is measured with Fault Status LOW and SET with IFS = 300 µA.

Table 4. STATIC ELECTRICAL CHARACTERISTICS

Characteristics noted under conditions 5.0 V ≤ V+ ≤ 28 V and -40

°C ≤ T

A ≤ 125°C unless otherwise noted. Typical values

noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted.

Characteristic

Symbol

Min

Typ

Max

Unit

POWER SUPPLY

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