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SA5778 Datasheet(PDF) 4 Page - NXP Semiconductors |
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SA5778 Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 16 page  Philips Semiconductors Product specification SA5778 Serial triple gauge driver (STGD) 1998 Apr 03 4 DC ELECTRICAL CHARACTERISTICS VBATT = 8.0 to 16V; Tamb = –40 to +105°C SYMBOL PARAMETER TEST CONDITION LIMITS UNITS SYMBOL PARAMETER TEST CONDITION MIN TYP MAX UNITS VBATT Battery supply voltage Normal operating range 8 16 V VSWBATT Switched battery supply voltage Normal operating range 7.5 16 V IBATT Battery supply current, operating VBATT = VBATTMAX RL = RLMIN 0.5 ma ISWBATT Switched battery supply current, operating Normal operating range 400 ma IBATTSB Battery supply current, standby VBATT = 12 V 60 µA VOH1 Output high voltage DATAOUT, IOH = 300µA 4.0 V VOH2 Output high voltage SwCONTROL, IOH = 10µA 40 V IOH Off state output current ST, VOH = 5 V 25 µA VOL1 Output low voltage ST, DATAOUT, IOL = 1.5 mA 0.4 V SwCONTROL, VOL2 Output low voltage IOL = 50 mA @ VBATTMAX 1.5 V IOL = 20 mA @ VBATTMIN 1.2 V VIH Input high voltage CS, SCLK, DATAIN, GOE, RUN 3.5 V VIL Input low voltage CS, SCLK, DATAIN, GOE, RUN 1.5 V VOVSD Battery overvoltage shutdown voltage VBATT 18 23 V IIH Input high current CS, SCLK, DATAIN, RUN GOE; VIH = 3.5 10 µA IIL Input low current CS, SCLK, DATAIN, RUN GOE; VIL=1.5 10 µA ACC1 Output function accuracy, major gauge RL = RLMIN; major gauge, G1 –0.5 +0.5 Deg ACC2,3 Output function accuracy, minor gauges RL = RLMIN; minor gauges, G2 & G3 –1.0 +1.0 Deg VDRIVE1 Coil drive voltage, major gauge 68 71 78 % SwBATT VDRIVE2,3 Coil drive voltage, minor gauges 70 74 80 % SwBATT Tamb = 105°C 226 Ω RLMIN Minimum coil load resistance Tamb = 25°C 171 Ω Tamb = –40°C 127 Ω VCOM Minor gauge bias voltage IOB (Source or Sink) RL = RLMIN 0.475 × SwBATT 0.525 × SwBATT V AC ELECTRICAL CHARACTERISTICS VBATT = 7.5 to 16V; Tamb = –40 to +105°C SYMBOL PARAMETER TEST CONDITION LIMITS UNITS SYMBOL PARAMETER TEST CONDITION MIN TYP MAX UNITS tCYC Clock cycle time 625 ns FSCLK Clock frequency TCYC 1.60 MHz tSCLKL SCLK LOW time 175 ns tSCLKH SCLK HIGH time 175 ns tCSH CS high to SCLK high time 75 ns tCSL SCLK low to CS low time 75 ns tSU DATAIN setup to SCLK high time 75 ns tHD SCLK high to DATAIN hold time 75 ns tDR DATAOUT rise time 0.8 to 3.6V; CL = 90pF 75 ns tDF DATAOUT fall time 3.6 to 0.8V; CL = 90pF 75 ns |
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