Preliminary PI3041A datasheet

Second Setup: The CIS modules made with these devices operate in excess of 5.0 MHz.

Accordingly the wafer probe specifications are supplemented with high frequency clocking

performance using an A6 length module’s PCB board.

Electro-Optical Characteristics (25

The electro-optical characteristics of PI3041A imaging sensor chip are listed in Table 2. This is the

wafer probe specification used to tests the each die at 25

Parameters

Symbols

Typical

Units

Notes

Number of Photo-elements

128

elements

Pixel-to-pixel spacing

~83.3

µm

Line scanning rate

Tint

(1)

128/Fclk

µs/line

Clock frequency

Fclk

(2)

500

KHz

See note 2 for higher clock

speed. (maximum 5 MHz)

Output voltage

Vpavg

(3)

1.85 ± 0.35

V

Output voltage non-uniformity

Up

(4)

± 7.5

%

Dark output voltage

Vd

(5)

<100

mV

Dark output non-uniformity

Ud

(6)

<100

mV

Adjacent Pixel non-uniformity

Upadj

(7)

<6.5

%

Chip-to-chip non-uniformity

Ucc

(8)

± 5

%

Table 2. Electro-Optical Characteristic

Notes: (1)

Tint stands for the line scanning rate or the integration time. It is determined by

the time interval between two start pulses, where the start pulses start the line-

scan process, as soon as, CP, module clock, acquires it and shifts it into the

internal shift register. The minimum integration time in one line scan of the

sensor is number of pixel sites divided by its clock frequency. In a CIS module it

is the number of sensors times the number of pixel in the sensor, all over the

clock frequency. Tint in the wafer probe is set with the calibration procedure use

to set the amplitude of Vpavg, see note (3).

(2)

Fclk is the device’s clock, CP, frequency and it is, also, equal to the pixel rate. In

the wafer test Fclk is set to 500 KHz. However, PIC (recently acquired by AMIS)

has been successfully mass-producing high frequency CIS modules, using only

the wafer test to qualify them. Hence, the devices are constantly tested for their

standard high-speed performance with each A6 modules in production. These

module production tests as proven that the low speed wafer probe tests are

sufficient to produce reliable image devices.

(3)

Vpavg =

∑Vp(n)/Npixels (average level in one line scan).

Where Vp(n) is the amplitude of n

Npixels is the total number of pixels in sensor chip. Vpavg is converted from

impulse current video pixel into a voltage output. See Figure 4, Video Pixel

Output in section Output Circuit Of The Image Sensor and Figure 5, Video

Output Test and Application Circuit in section Signal Conversion Circuit on page

6 and 7. There Is a calibration procedure to calibrate Vpavg using Tint as

variable to control the exposure. Hence, Vpavg is calibrated for each image

Page 7 of 18 Date: 09/23/05