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CD1020 Datasheet(PDF) 42 Page - NXP Semiconductors

Part # CD1020
Description  22-channel multiple switch detection interface
PDF  61 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

CD1020 Datasheet(HTML) 42 Page - NXP Semiconductors

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NXP Semiconductors
CD1020
22-channel multiple switch detection interface
All voltages are with respect to ground, unless otherwise noted. Exceeding these ratings may cause a malfunction or
permanent damage to the device.
Symbol
Ratings
Min
Max
Unit
Notes
VBATP
Battery voltage
6.0
36
V
VDDQ
Supply voltage
3.0
5.25
V
CS_B, MOSI,
MISO, SCLK SPI inputs / outputs
3.0
5.25
V
SGx, SPx
Switch input range
–1.0
36
V
AMUX, INT_B AMUX, INT_B
0.0
5.25
V
WAKE_B
WAKE_B
0.0
36
V
Table 40. Operating conditions
9.4 Electrical characteristics
9.4.1 Static electrical characteristics
TA = –40 °C to +125 °C, VDDQ = 3.1 V to 5.25 V, VBATP = 6.0 V to 28.0 V, unless otherwise noted.
Symbol
Characteristic
Min
Typ
Max
Units
Notes
Power input
VBATP(POR)
VBATP supply voltage POR
• VBATP supply Power-On-Reset voltage.
2.7
3.3
3.8
V
VBATPUV
VBATP undervoltage rising threshold
—
4.3
4.5
V
VBATPUVHYS
VBATP undervoltage hysteresis
250
—
500
mV
VBATPOV
VBATP overvoltage rising threshold
32
—
37
V
VBATPOVHYS
VBATP overvoltage hysteresis
1.5
—
3.0
V
IBAT(ON)
VBATP supply current
• All switches open, normal mode, tri-state disabled (all channels)
—
7.0
12
mA
IBATP,IQ,LPM,P
VBATP low-power mode supply current (polling disabled)
• Parametric VBATP, 6.0 V < VBATP < 28 V
—
—
40
µA
IPOLLING,IQ
VBATP polling current
• Polling 64 ms, 11 inputs of wake enabled
—
—
20
µA
(11)
IVDDQ,NORMAL
Normal mode (IVDDQ)
• SCLK, MOSI, WakeB = 0 V, CS_B, INT_B =VDDQ, no SPI communication, AMUX
selected no input
—
—
500
µA
IVDDQ,LPM
Logic low-power mode supply current
• SCLK, MOSI = 0 V, CS_B, INT_B, WAKE_B = VDDQ, no SPI communication
—
—
10
µA
VGNDOFFSET
Ground Offset
• Ground offset of Global pins to IC ground
–1.0
—
1.0
V
(20)
VDDQUV
VDDQ undervoltage falling threshold
2.2
—
2.8
V
VDDQUVHYS
VDDQ undervoltage hysteresis
150
—
350
mV
Switch input
ILEAKSG_GND
Leakage (SGx/SPx pins) to GND
• Inputs tristated, analog mux selected for each input, voltage at SGx = VBATP
—
—
2.0
μA
ILEAKSG_BAT
Leakage (SGx/SPx pins) to battery
• Inputs tristated, analog mux selected for each input, voltage at SGx = GND
—
—
2.0
μA
ISUSSG
SG sustain current / mode 0 wetting current
• VBATP 6.0 to 28 V
1.6
2.0
2.4
mA
ISUSSB
SB sustain current / mode 0 wetting current
1.75
2.2
2.85
mA
IWET
Wetting current level (SG and SB)
• Mode 1 = 8 mA
• Mode 2 = 12 mA
• Mode 3 = 16 mA
—
8
12
16
—
mA
Table 41. Static electrical characteristics
CD1020
All information provided in this document is subject to legal disclaimers.
© 2024 NXP B.V. All rights reserved.
Product data sheet
Rev. 5 — 20 August 2024
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