| Electronic Components Datasheet Search |
|
CD1020 Datasheet(PDF) 42 Page - NXP Semiconductors |
|
|
|||||||||||||||||||||||||||||
CD1020 Datasheet(HTML) 42 Page - NXP Semiconductors |
|
42 / 61 page ![]() NXP Semiconductors CD1020 22-channel multiple switch detection interface All voltages are with respect to ground, unless otherwise noted. Exceeding these ratings may cause a malfunction or permanent damage to the device. Symbol Ratings Min Max Unit Notes VBATP Battery voltage 6.0 36 V VDDQ Supply voltage 3.0 5.25 V CS_B, MOSI, MISO, SCLK SPI inputs / outputs 3.0 5.25 V SGx, SPx Switch input range –1.0 36 V AMUX, INT_B AMUX, INT_B 0.0 5.25 V WAKE_B WAKE_B 0.0 36 V Table 40. Operating conditions 9.4 Electrical characteristics 9.4.1 Static electrical characteristics TA = –40 °C to +125 °C, VDDQ = 3.1 V to 5.25 V, VBATP = 6.0 V to 28.0 V, unless otherwise noted. Symbol Characteristic Min Typ Max Units Notes Power input VBATP(POR) VBATP supply voltage POR • VBATP supply Power-On-Reset voltage. 2.7 3.3 3.8 V VBATPUV VBATP undervoltage rising threshold — 4.3 4.5 V VBATPUVHYS VBATP undervoltage hysteresis 250 — 500 mV VBATPOV VBATP overvoltage rising threshold 32 — 37 V VBATPOVHYS VBATP overvoltage hysteresis 1.5 — 3.0 V IBAT(ON) VBATP supply current • All switches open, normal mode, tri-state disabled (all channels) — 7.0 12 mA IBATP,IQ,LPM,P VBATP low-power mode supply current (polling disabled) • Parametric VBATP, 6.0 V < VBATP < 28 V — — 40 µA IPOLLING,IQ VBATP polling current • Polling 64 ms, 11 inputs of wake enabled — — 20 µA (11) IVDDQ,NORMAL Normal mode (IVDDQ) • SCLK, MOSI, WakeB = 0 V, CS_B, INT_B =VDDQ, no SPI communication, AMUX selected no input — — 500 µA IVDDQ,LPM Logic low-power mode supply current • SCLK, MOSI = 0 V, CS_B, INT_B, WAKE_B = VDDQ, no SPI communication — — 10 µA VGNDOFFSET Ground Offset • Ground offset of Global pins to IC ground –1.0 — 1.0 V (20) VDDQUV VDDQ undervoltage falling threshold 2.2 — 2.8 V VDDQUVHYS VDDQ undervoltage hysteresis 150 — 350 mV Switch input ILEAKSG_GND Leakage (SGx/SPx pins) to GND • Inputs tristated, analog mux selected for each input, voltage at SGx = VBATP — — 2.0 μA ILEAKSG_BAT Leakage (SGx/SPx pins) to battery • Inputs tristated, analog mux selected for each input, voltage at SGx = GND — — 2.0 μA ISUSSG SG sustain current / mode 0 wetting current • VBATP 6.0 to 28 V 1.6 2.0 2.4 mA ISUSSB SB sustain current / mode 0 wetting current 1.75 2.2 2.85 mA IWET Wetting current level (SG and SB) • Mode 1 = 8 mA • Mode 2 = 12 mA • Mode 3 = 16 mA — 8 12 16 — mA Table 41. Static electrical characteristics CD1020 All information provided in this document is subject to legal disclaimers. © 2024 NXP B.V. All rights reserved. Product data sheet Rev. 5 — 20 August 2024 Document feedback 42 / 61 |
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |