LTC6906 datasheet(5/30 Pages) AD

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LTC6990

Rev. D

For more information www.analog.com

TYPICAL PERFORMANCE CHARACTERISTICS

VSET vs ISET

VSET vs Supply Voltage

VSET vs Temperature

Frequency Error vs RSET

Frequency Error

vs Supply Voltage

Frequency Error vs Temperature

V+ = 3.3V, unless otherwise noted.

RSET (kΩ)

6990 G01

–1

–2

–3

–4

100

1000

TA = 25°C

GUARANTEED MAX

OVER TEMPERATURE

GUARANTEED MIN

OVER TEMPERATURE

TYPICAL MAX

90% OF UNITS

TYPICAL MIN

SUPPLY VOLTAGE (V)

6990 G02

0.5

0.4

0.3

0.1

0.2

–0.1

–0.2

–0.3

–0.5

–0.4

TA = 25°C

RSET = 800k

RSET = 200k

RSET = 50k

ISET (µA)

6990 G04

1.003

1.002

1.001

1.000

V+ = 3.3V

TA = 25°C

SUPPLY VOLTAGE (V)

6990 G05

1.003

1.002

1.001

1.000

RSET = 200k

TA = 25°C

TEMPERATURE (°C)

6990 G06

1.020

1.005

1.000

1.010

1.015

0.995

0.990

0.985

0.980

–50

–25

100 125

RSET = 200k

3 TYPICAL PARTS

TEMPERATURE (°C)

6990 G03

1.5

0.5

1.0

0.0

–0.5

–1.0

–1.5

–50 –25

100

125

V+ = 3.3V

DIVCODE = 4

RSET = 50k

RSET = 267k

RSET = 800k

ELECTRICAL CHARACTERISTICS

Note 11: Long-term drift of silicon oscillators is primarily due to the

movement of ions and impurities within the silicon and is tested at 30°C

under otherwise nominal operating conditions. Long-term drift is specified

as ppm/√kHr due to the typically nonlinear nature of the drift. To calculate

drift for a set time period, translate that time into thousands of hours, take

the square root and multiply by the typical drift number. For instance, a

year is 8.77kHr and would yield a drift of 266ppm at 90ppm/√kHr. Drift

without power applied to the device may be approximated as 1/10th of the

drift with power, or 9ppm/√kHr for a 90ppm/√kHr device.

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