Datasheet

Please read the Important Notice and Warnings at the end of this document

001-98296 Rev. *L

www.infineon.com

page 1

2023-08-11

S70GL02GS

2 Gbit (256 MB) GL-S MIRRORBIT™ Flash

Parallel, 3.0 V

General description

The S70GL02GS 2-Gb MIRRORBIT™ flash memory device is fabricated on 65-nm MIRRORBIT™ process technology.

This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features

a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in

faster effective programming time than standard single byte/word programming algorithms. This makes the

device an ideal product for today’s embedded applications that require higher density, better performance and

lower power consumption.

This document contains information for the S70GL02GS device, which is a dual die stack of two S29GL01GS die.

For detailed specifications, please refer to the discrete die datasheet.

Distinctive characteristics

• CMOS 3.0 V core with Versatile I/O™

• Two 1024 Megabit (S29GL01GS) in a single 64-ball Fortified-BGA package (see S29GL01GS datasheet for full

specifications)

• 65-nm MIRRORBIT™ process technology

• Single supply (VCC) for read / program / erase (2.7 V to 3.6 V)

•Versatile I/O feature

- Wide I/O voltage (VIO): 1.65 V to VCC

• ×16 data bus

• 16-word/32-byte page read buffer

• 512-byte programming buffer

- Programming in page multiples, up to a maximum of 512 bytes

• Sector erase

- Uniform 128-KB sectors

- S70GL02GS: two thousand forty-eight sectors

• Suspend and Resume commands for Program and Erase operations

• Status Register, data polling, and Ready/Busy pin methods to determine device status

• Advanced sector protection (ASP)

- Volatile and non-volatile protection methods for each sector

• Separate 1024-bye one time program (OTP) array with two lockable regions

- Available in each device Support for common flash interface (CFI)

•WP# input

- Protects first or last sector, or first and last sectors of each device, regardless of sector protection settings

Document

Document number

S29GL01GS datasheet

001-98285