TPS65167 datasheet(3/39 Pages) TI

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ELECTRICAL CHARACTERISTICS

TPS65167

TPS65167A

SLVS760B – APRIL 2007 – REVISED OCTOBER 2007

AVIN=VINB=SUPN=12V, EN=REGOUT, Vs = 15V, Vlogic = 3.3V , Vaux = 1.8V, TA = –40°C to 85°C, typical values are at

TA = 25°C (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

SUPPLY CURRENT

Input voltage range

Quiescent current into AVIN

Not switching, FB = FB + 5%

1.5

Quiescent current into VINB

Not switching, FBB = FBB + 5%

0.15

Quiescent current into SUP

Not switching, FB = FBB = FBN = FBP = + 5%

275

µA

Undervoltage lockout threshold

VI falling

4.7

5.2

5.7

UVLO

Undervoltage lockout threshold

VI rising

4.9

5.45

5.9

Thermal shutdown

155

°C

Thermal shutdown hysteresis

°C

REFERENCE VOLTAGE REF

Vref

Reference voltage

VI = 6 V to 14 V, Iref = 10 µA

1.205

1.213

1.219

LOGIC SIGNALS CTRL, HVS

VIH

High level input voltage

6 V

≤ VIN ≤ 14 V

1.4

VIL

Low level input voltage

6 V

≤ VIN ≤ 14 V

0.4

Ilkg

Input leakage current

EN = CTRL = HVS = GND or 6 V

0.01

0.1

µA

SEQUENCING GDLY/EN

EN/GDLY Charge current

V(threshold) = 1.213 V

3.6

4.8

6.2

µA

EN/GDLY threshold

1.23

EN/GDLY pulldown resistor

4.5

Ω

SWITCHING FREQUENCY

Switching frequency

600

750

900

kHz

REGULATOR REGOUT

Regulator output voltage

Ireg = 1 mA

4.6

4.8

BOOST CONVERTER (Vs)

Output voltage range

VFB

Feedback regulation voltage

1.136

1.146

1.154

IFB

Feedback input bias current

100

N-MOSFET on-resistance (Q1)

I(SW) = 500 mA

160

270

Ω

RDS(on)

P-MOSFET on-resistance (Q2)

I(SW) = 200 mA

Ω

IMAX

Maximum P-MOSFET peak switch current

ILIM

N-MOSFET switch current limit (Q1)

3.5

4.2

4.9

Ilkg

Switch leakage current

V(SW) = 15 V

µA

Line Regulation

6 V

≤ Vin ≤ 14 V, IO = 2 mA

0.006

%/V

Load Regulation

2 mA

≤ Iout ≤ 1.8 A

0.06

%/A

BOOST CONVERTER (Vs) OVERVOLTAGE PROTECTION

Switch overvoltage protection

Vs rising

19.5

20.2

Switch overvoltage protection hysteresis

0.6

GATE DRIVE (GD) AND BOOST CONVERTER PROTECTION

I(GD)

Gate drive sink current

EN = high

µA

R(GD)

Gate drive internal pull up resistance

Ω

ton

Gate on time during short-circuit

Vs < 4.8 V

toff

Gate off time during short-circuit

Vs < 4.8 V

TEMPERATURE SENSOR (TEMP)

Output voltage range

1.2

2.5

Drive current

200

µA

TA = 85°C, I = 200 µA, device not switching,

Output voltage at TA = 85°C

2.037

FB = FBnominal + 5%

Temperature accuracy

–6

°C

Temperature coefficient

5.7

mV/

°C

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