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LM5111 Datasheet(PDF) 9 Page - Texas Instruments |
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LM5111 Datasheet(HTML) 9 Page - Texas Instruments |
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9 / 30 page ![]() UVLO VEE IN_A VCC VCC OUT_A VEE OUT_B VEE IN_B Copyright © 2016, Texas Instruments Incorporated 9 LM5111 www.ti.com SNVS300H – JULY 2004 – REVISED SEPTEMBER 2016 Product Folder Links: LM5111 Submit Documentation Feedback Copyright © 2004–2016, Texas Instruments Incorporated 8 Detailed Description 8.1 Overview LM5111 dual gate driver consists of two independent and identical driver channels with TTL compatible logic inputs and high current totem-pole outputs that source or sink current to drive MOSFET gates. The driver output consist of a compound structure with MOS and bipolar transistor operating in parallel to optimize current capability over a wide output voltage and operating temperature range. The bipolar device provides high peak current at the critical threshold region of the MOSFET VGS while the MOS devices provide rail-to-rail output swing. The totem pole output drives the MOSFET gate between the gate drive supply voltage VCC and the power ground potential at the VEE pin. The control inputs of the drivers are high impedance CMOS buffers with TTL compatible threshold voltages. The LM5111 pinout was designed for compatibility with industry standard gate drivers in single supply gate driver applications. The input stage of each driver should be driven by a signal with a short rise and fall time. Slow rising and falling input signals, although not harmful to the driver, may result in the output switching repeatedly at a high frequency. 8.2 Functional Block Diagram |
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