N/C

INA

VEE

INB

OUTB

1: N/C

U1

C2 (Bypass Capacitor)

N/C

2: INA

N/C

3: VEE

VEE

N/C

4: INB

Power Stage

Current

7: OUTA

6: VCC

5: OUTB

Q1

Output Loop of Driver

Bias

Loop

R3

3

8: N/C

R4

4

14

LM5111

SNVS300H – JULY 2004 – REVISED SEPTEMBER 2016

www.ti.com

Product Folder Links: LM5111

Submit Documentation Feedback

Copyright © 2004–2016, Texas Instruments Incorporated

11.2 Layout Example

Figure 15. Layout

11.3 Thermal Considerations

The primary goal of thermal management is to maintain the integrated circuit (IC) junction temperature (TJ) below

a specified maximum operating temperature to ensure reliability. It is essential to estimate the maximum TJ of IC

components in worst case operating conditions. The junction temperature is estimated based on the power

dissipated in the IC and the junction to ambient thermal resistance θJA for the IC package in the application board

and environment. The θJA is not a given constant for the package and depends on the printed circuit board

design and the operating environment.

11.3.1 Drive Power Requirement Calculations in LM5111

The LM5111 dual low side MOSFET driver is capable of sourcing/sinking 3A/5A peak currents for short intervals

to drive a MOSFET without exceeding package power dissipation limits. High peak currents are required to

switch the MOSFET gate very quickly for operation at high frequencies.