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LM5111 Datasheet(PDF) 1 Page - Texas Instruments

Part # LM5111
Description  LM5111 Dual 5-A Compound Gate Driver
PDF  30 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

LM5111 Datasheet(HTML) 1 Page - Texas Instruments

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LM5111
INB
INA
0.1 µF
1.0 µF
N/C
INA
2
VEE
3
INB
4
7
6
5
8
N/C
OUTA
VCC
OUTB
1
Copyright © 2016, Texas Instruments Incorporated
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LM5111
SNVS300H – JULY 2004 – REVISED SEPTEMBER 2016
LM5111 Dual 5-A Compound Gate Driver
1
1 Features
1
Independently Drives Two N-Channel MOSFETs
Compound CMOS and Bipolar Outputs Reduce
Output Current Variation
5-A Sink and 3-A Source Current Capability
Two Channels can be Connected in Parallel to
Double the Drive Current
Independent Inputs (TTL Compatible)
Fast Propagation Times (25 ns Typical)
Fast Rise and Fall Times (14 ns and 12 ns Rise
and Fall, Respectively, With 2-nF Load)
Available in Dual Noninverting, Dual Inverting and
Combination Configurations
Supply Rail Undervoltage Lockout Protection
(UVLO)ƒ
LM5111-4 UVLO Configured to Drive PFET
through OUT_A and NFET through OUT_B
Pin Compatible With Industry Standard Gate
Drivers
2 Applications
Synchronous Rectifier Gate Drivers
Switch-mode Power Supply Gate Driver
Solenoid and Motor Drivers
3 Description
The LM5111 Dual Gate Driver replaces industry
standard gate drivers with improved peak output
current and efficiency. Each compound output driver
stage includes MOS and bipolar transistors operating
in parallel that together sink more than 5-A peak from
capacitive
loads.
Combining
the
unique
characteristics of MOS and bipolar devices reduces
drive current variation with voltage and temperature.
Undervoltage lockout protection is also provided. The
drivers can be operated in parallel with inputs and
outputs
connected
to
double
the
drive
current
capability. This device is available in the SOIC
package
or
the
thermally
enhanced
MSOP-
PowerPAD package.
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
LM5111
SOIC (8)
5.00 mm x 6.00 mm
MSOP-PowerPAD (8) 3.00 mm x 4.90 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Application Diagram


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