Data Sheet

ADPA1112

1GHz to 22GHz, 15W, GaN Power Amplifier

Rev. 0

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FEATURES

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Frequency range: 1GHz to 22GHz

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50Ω matched input and output

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Power gain: 14dB typical from 8GHz to 16GHz

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POUT: 42dBm typical from 8GHz to 16GHz

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PAE: 25% typical from 8GHz to 16GHz

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S21: 20.5dB typical from 8GHz to 16GHz

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OIP3: 44dBm typical from 8GHz to 16GHz

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Integrated RF power detector

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VDD: 28V

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IDQ: 600mA

APPLICATIONS

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Electronic warfare

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Test and measurement equipment

FUNCTIONAL BLOCK DIAGRAM

Figure 1. Functional Block Diagram

GENERAL DESCRIPTION

The ADPA1112 is a 1GHz to 22GHz wideband power amplifier with

a saturated output power (POUT) of 42dBm, power added efficiency

(PAE) of 25%, and a power gain of 14dB typical from 8GHz to

16GHz at input power (PIN) of 28.0dBm. The RF input and RF

output are internally matched and AC-coupled. A drain bias voltage

(VDD) of 28V is applied to the VDD1 and VDD2 pins, which have

integrated bias inductors. The drain current is set by applying a

negative voltage to the VGG1 pin. A temperature-compensated RF

detector is integrated allowing monitoring of the RF output power.

The ADPA1112 is fabricated on a gallium nitride (GaN) process and

is specified for operation from −40°C to +85°C.