1

2

3

4

5

6

7

SCLK

DOUT

GND

- IN

+IN

ADC121S705

CS

VREF

VA

8

ADC121S705

www.ti.com

SNAS355B – DECEMBER 2006 – REVISED MARCH 2013

ADC121S705 12-Bit, 500 kSPS to 1 MSPS, Differential Input, Micro Power A/D Converter

Check for Samples: ADC121S705

1

FEATURES

DESCRIPTION

The ADC121S705 is a 12-bit, 500 kSPS to 1 MSPS

2

•

True Differential Inputs

sampling

Analog-to-Digital

(A/D)

converter

that

•

Ensured performance from 500 kSPS to 1

features a fully differential, high impedance analog

MSPS

input and an external reference. The reference

•

External Reference

voltage can be varied from 1.0V to VA, with a

corresponding resolution between 244µV and VA

•

Wide Input Common-Mode Voltage Range

divided by 4096.

•

SPI™/QSPI™/MICROWIRE/DSP Compatible

The output serial data is binary 2's complement and

Serial Interface

is compatible with several standards, such as SPI™,

QSPI™, MICROWIRE, and many common DSP

APPLICATIONS

serial interfaces. The differential input, low power

•

Automotive Navigation

consumption, and small size make the ADC121S705

ideal for direct connection to transducers in battery

•

Portable Systems

operated

systems

or

remote

data

acquisition

•

Medical Instruments

applications.

•

Instrumentation and Control Systems

Operating from a single 5V supply, the supply current

•

Motor Control

when operating at 1 MSPS is typically 2.3 mA. The

•

Direct Sensor Interface

supply current drops down to 0.3 µA typically when

the ADC121S705 enters power-down mode. The

KEY SPECIFICATIONS

ADC121S705 is available in the VSSOP-8 package.

Operation is ensured over the industrial temperature

•

Conversion Rate: 500 kSPS to 1 MSPS

range of

−40°C to +105°C and clock rates of 8 MHz

•

INL: ± 0.95 LSB (Max)

to 16 MHz.

•

DNL: ±0.95 LSB (Max)

•

Offset Error: ±3.0 LSB (Max)

•

Gain Error: ±6.5 LSB (Max)

•

SINAD: 69.5 db (Min)

•

Power Consumption at VA = 5V

–

Active, 1 MSPS: 11.5 mW (Typ)

–

Active, 500 kSPS: 9.0 mW (Typ)

–

Power-Down: 1.5 µW (Typ)

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Connection Diagram

1

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2

All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Copyright © 2006–2013, Texas Instruments Incorporated

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.