| Electronic Components Datasheet Search |
|
TMS28F200AST Datasheet(PDF) 42 Page - Texas Instruments |
|
|
|||||||||||||||||||||||||||||
TMS28F200AST Datasheet(HTML) 42 Page - Texas Instruments |
|
42 / 79 page ![]() TMS28F002Axy, TMS28F200Axy 262144 BY 8-BIT/131072 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES SMJS826D – JANUARY 1996 – REVISED SEPTEMBER 1997 42 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 TMS28F002AMy and TMS28F200AMy The TMS28F002AMy and TMS28F200AMy configurations offer a 3-V or 5-V memory read with a 12-V program and erase. These configurations are intended for low 3.3-V reads and the fast programming offered with the 12-V VPP and 5-V VCC. The configurations are offered in two different temperature ranges: 0°C to 70°C and – 40 °C to 85°C. recommended operating conditions for TMS28F002AMy and TMS28F200AMy MIN NOM MAX UNIT VCC Supply voltage During write/read/erase/erase suspend 3.3-V VCC range 3 3.3 3.6 V VCC Supply voltage During write/read/erase/erase-suspend 5-V VCC range 4.5 5 5.5 V VPP Supply voltage During read only ( VPPL ) VPPL 0 6.5 V VPP Supply voltage During write/erase/erase-suspend 12-V VPP range 11.4 12 12.6 V 33 V VCC range TTL 2 VCC + 0.5 VIH High-level dc input 3.3-V VCC range CMOS VCC – 0.2 VCC + 0.2 V VIH g voltage 5V VCC range TTL 2 VCC + 0.3 V 5-V VCC range CMOS VCC – 0.2 VCC + 0.2 33 V VCC range TTL – 0.5 0.8 VIL Low-level dc input 3.3-V VCC range CMOS VSS – 0.2 VSS + 0.2 V VIL voltage 5V VCC range TTL – 0.3 0.8 V 5-V VCC range CMOS VSS – 0.2 VSS + 0.2 VLKO VCC lock-out voltage from write/erase 2 V VHH RP unlock voltage 11.4 12 13 V VPPLK VPP lock-out voltage from write/erase 0 1.5 V TA Operating free air temperature during read/erase/program L suffix 0 70 °C TA Operating free-air temperature during read/erase/program E suffix – 40 85 °C NOTE 7:. Minimum value at TA = 25°C. word/byte typical write and block-erase performance for TMS28F002AMy and TMS28F200AMy (see Notes 8 and 9) 12-V VPP RANGE PARAMETER 3.3-V VCC RANGE 5-V VCC RANGE MIN TYP MAX TYP MAX Main block erase time 1.3 1.1 14 Main block byte-program time 1.6 1.2 4.2 Main block word-program time 0.8 0.6 2.1 Parameter/ boot block-erase time 0.44 0.34 7 NOTES: 8. Typical values shown are at TA = 25°C and nominal conditions. 9. Excludes system-level overhead (all times in seconds). |
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |