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TMS28F200AST Datasheet(PDF) 55 Page - Texas Instruments

Part # TMS28F200AST
Description  262144 BY 8-BIT/131072 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
PDF  79 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TMS28F200AST Datasheet(HTML) 55 Page - Texas Instruments

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TMS28F002Axy, TMS28F200Axy
262144 BY 8-BIT/131072 BY 16-BIT
AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
SMJS826D – JANUARY 1996 – REVISED SEPTEMBER 1997
55
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
switching characteristics for TMS28F200AFy over recommended ranges of supply voltage
(automotive temperature range) (see Table 9 and Figure 7)
read operations
ALT
’28F002AFy 70
’28F200AFy 70
’28F002AFy 80
’28F200AFy 80
’28F002AFy 90
’28F200AFy 90
PARAMETER
ALT.
SYMBOL
5-V VCC
RANGE
5-V VCC
RANGE
5-V VCC
RANGE
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
ta(A)
Access time from A0 – A16 (see Note 15)
tAVQV
70
80
90
ns
ta(E)
Access time from E
tELQV
70
80
90
ns
ta(G)
Access time from G
tGLQV
35
40
35
ns
tc(R)
Cycle time, read
tAVAV
70
80
90
ns
td(E)
Delay time, E low to low-impedance output
tELQX
0
0
0
ns
td(G)
Delay time, G low to low-impedance output
tGLQX
0
0
0
ns
tdis(E)
Disable time, E to high-impedance output
tEHQZ
25
30
35
ns
tdis(G)
Disable time, G to high-impedance output
tGHQZ
25
30
35
ns
th(D)
Hold time, DQ valid from A0 – A16, E, or G,
whichever occurs first (see Note 15)
tAXQX
0
0
0
ns
tsu(EB)
Setup time, BYTE from E low
tELFL
tELFH
5
5
5
ns
td(RP)
Output delay time from RP high
tPHQV
300
300
300
ns
tdis(BL)
Disable time, BYTE low to DQ8 – DQ15 in the
high-impedance state
tFLQZ
30
30
35
ns
ta(BH)
Access time from BYTE going high
tFHQV
70
80
90
ns
NOTE 15: A–1 – A16 for byte-wide



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