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TMS28F200AST Datasheet(PDF) 22 Page - Texas Instruments

Part # TMS28F200AST
Description  262144 BY 8-BIT/131072 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
PDF  79 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TMS28F200AST Datasheet(HTML) 22 Page - Texas Instruments

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TMS28F002Axy, TMS28F200Axy
262144 BY 8-BIT/131072 BY 16-BIT
AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
SMJS826D – JANUARY 1996 – REVISED SEPTEMBER 1997
22
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
TMS28F002ASy and TMS28F200ASy
The TMS28F002ASy and the TMS28F200ASy configurations have the auto-select feature that allows
alternative read and program / erase voltages. Memory reads can be performed using VCC = 3.3 V for optimum
power consumption or at VCC = 5 V, for device performance. Erasing or programming the device can be
accomplished with 5-V VPP, which eliminates having to use a 12-V source and/or in-system voltage converters.
Alternatively, 12-V VPP operation exists for systems that already have a 12-V power supply, which provides
faster programming and erasing times. These configurations are offered in two different temperature ranges:
0
°C to 70°C and – 40°C to 85°C.
recommended operating conditions for TMS28F002ASy and TMS28F200ASy
MIN
NOM
MAX
UNIT
VCC
Supply voltage
During write/read/erase/erase suspend
3.3-V VCC range
3
3.3
3.6
V
VCC
Supply voltage
During write/read/erase/erase suspend
5-V VCC range
4.5
5
5.5
V
During read only ( VPPL )
VPPL
0
6.5
VPP
Supply voltage
During write/erase/erase suspend
5-V VPP range
4.5
5
5.5
V
During write/erase/erase suspend
12-V VPP range
11.4
12
12.6
33 V VCC range
TTL
2
VCC + 0.5
VIH
High-level dc
3.3-V VCC range
CMOS
VCC – 0.2
VCC + 0.2
V
VIH
g
input voltage
5V VCC range
TTL
2
VCC + 0.3
V
5-V VCC range
CMOS
VCC – 0.2
VCC + 0.2
33 V VCC range
TTL
– 0.5
0.8
VIL
Low-level dc input
3.3-V VCC range
CMOS
VSS – 0.2
VSS + 0.2
V
VIL
voltage
5V VCC range
TTL
– 0.3
0.8
V
5-V VCC range
CMOS
VSS – 0.2
VSS + 0.2
VLKO
VCC lock-out voltage from write/erase (see Note 7)
2
V
VHH
RP unlock voltage
11.4
12
13
V
VPPLK VPP lock-out voltage from write/erase
0
1.5
V
TA
Operating free air temperature during read/erase/program
L suffix
0
70
°C
TA
Operating free-air temperature during read/erase/program
E suffix
– 40
85
°C
NOTE 7: Minimum value at TA = 25°C.
word/byte typical write and block-erase performance for TMS28F002ASy and TMS28F200ASy
(see Notes 8 and 9)
5-V VPP RANGE
12-V VPP RANGE
PARAMETER
3.3-V VCC
RANGE
5-V VCC
RANGE
3.3-V VCC
RANGE
5-V VCC
RANGE
MIN
TYP
MAX
MIN
TYP
MAX
MIN
TYP
MAX
MIN
TYP
MAX
Main block erase time
2.4
1.9
1.3
1.1
14
Main block byte-program time
1.7
1.4
1.6
1.2
4.2
Main block word-program time
1.1
0.9
0.8
0.6
2.1
Parameter/ boot-block erase time
0.84
0.8
0.44
0.34
7
NOTES:
8. Typical values shown are at TA = 25°C and nominal conditions
9. Excludes system-level overhead (all times in seconds)



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