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TMS28F200AST Datasheet(PDF) 27 Page - Texas Instruments

Part # TMS28F200AST
Description  262144 BY 8-BIT/131072 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
PDF  79 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TMS28F200AST Datasheet(HTML) 27 Page - Texas Instruments

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switching characteristics for TMS28F002ASy and TMS28F200ASy over recommended ranges of supply voltage
(commercial and extended temperature ranges) (see Table 9 and Figure 7)
read operations
ALT
’28F002ASy 60
’28F200ASy 60
’28F002ASy 70
’28F200ASy 70
’28F002ASy 80
’28F200ASy 80
PARAMETER
ALT.
SYMBOL
3.3-V VCC
RANGE
5-V VCC
RANGE
3.3-V VCC
RANGE
5-V VCC
RANGE
3.3-V VCC
RANGE
5-V VCC
RANGE
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
ta(A)
Access time from A0 – A16
(see Note 15)
tAVQV
110
60
130
70
150
80
ns
ta(E)
Access time from E
tELQV
110
60
130
70
150
80
ns
ta(G)
Access time from G
tGLQV
65
35
80
40
90
40
ns
tc(R)
Cycle time, read
tAVAV
110
60
130
70
150
80
ns
td(E)
Delay time, E low to low-impedance
output
tELQX
0
0
0
0
0
0
ns
td(G)
Delay time, G low to low-impedance
output
tGLQX
0
0
0
0
0
0
ns
tdis(E)
Disable time, E to high-impedance
output
tEHQZ
55
25
70
30
80
30
ns
tdis(G)
Disable time, G to high-impedance
output
tGHQZ
45
25
55
30
60
30
ns
th(D)
Hold time, DQ valid from A0 – A16, E, or
G, whichever occurs first (see Note 15)
tAXQX
0
0
0
0
0
0
ns
tsu(EB)
Setup time, BYTE from E low
tELFL
tELFH
5
5
5
5
5
5
ns
td(RP)
Delay time, RP high to output
tPHQV
800
450
800
450
800
450
ns
tdis(BL)
Disable time, BYTE low to DQ8 – DQ15
in high-impedance state
tFLQZ
45
25
55
30
60
30
ns
ta(BH)
Access time from BYTE going high
tFHQV
110
60
130
70
150
80
ns
NOTE 15: A–1 – A16 for byte-wide



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