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OPA2156

SBOS900B – SEPTEMBER 2018 – REVISED JUNE 2019

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Copyright © 2018–2019, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Theseare stress ratings

only, which do not imply functional operation of the device at these or anyother conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extendedperiods may affect device reliability.

(2)

Short-circuit to ground, one amplifier per package.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Supply voltage, VS = (V+) – (V–)

±20

(+40, single supply)

V

Signal input pins

Voltage

Common-mode

(V–) – 0.5

(V+) + 0.5

V

Differential

0.5

Current

±10

mA

Output short circuit(2)

Continuous

Temperature

Operating junction

–40

150

°C

Storage, Tstg

–65

150

(1)

JEDEC document JEP155 states that 500-V HBM allows safemanufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safemanufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±3000

V

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±1000

V

(1)

Please see Thermal Considerations section for information on ambient vs device junction temperature

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Supply voltage, VS = (V+) – (V–)

4.5 (±2.25)

36 (±18)

V

Specified temperature (SOIC)(1)

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

6.4 Thermal Information: OPA2156

THERMAL METRIC(1)

OPA2156

UNIT

8 PINS

D (SOIC)

DGK (VSSOP)

RθJA

Junction-to-ambient thermal resistance

119.2

163.8

°C/W

RθJC(top)

Junction-to-case(top) thermal resistance

51.1

52.5

°C/W

RθJB

Junction-to-board thermal resistance

64.7

86.5

°C/W

ψJT

Junction-to-top characterization parameter

9.7

5.1

°C/W

ψJB

Junction-to-board characterization parameter

63.5

84.7

°C/W