TMUX1113 datasheet(19/44 Pages) TI2

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7.5 Break-before-make

The TMUX1113 has break-before-make delay which allows the device to be used in cross-point switching

application. The output first breaks from the on-state switch before making the connection with the next on-state

switch. The time delay between the break and the make is known as break-before-make delay. Figure 7-5 shows

the setup used to measure break-before-make delay, denoted by the symbol tOPEN(BBM).

VDD

VSEL

0 V

VIH

VIL

90%

Output 2

tBBM1

tBBM2

90%

Output 1

90%

0 V

tBBM= min (tBBM1, tBBM2)

VSEL

GND

OUTPUT 1

S1, S4

D1, D4

SEL1 - SEL4

OUTPUT 2

S2, S3

D2, D3

VDD

0.1 F

Figure 7-5. Break-Before-Make Delay Measurement Setup

7.6 Charge injection

The TMUX111x devices have a transmission-gate topology. Any mismatch in capacitance between the NMOS

and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the

gate signal. The amount of charge injected into the source or drain of the device is known as charge injection,

and is denoted by the symbol QC. Figure 7-6 shows the setup used to measure charge injection from source

(Sx) to drain (Dx).

VOUT

Output

0 V

VDD

QC = CL ×

VOUT

VSEL

GND

OUTPUT

SEL1 - SEL4

VDD

0.1 F

VOUT

OUTPUT

VOUT

VSEL

Figure 7-6. Charge-Injection Measurement Setup

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TMUX1111, TMUX1112, TMUX1113

SCDS408C – FEBRUARY 2019 – REVISED DECEMBER 2023

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