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TMUX1113 Datasheet(PDF) 23 Page - Texas Instruments |
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TMUX1113 Datasheet(HTML) 23 Page - Texas Instruments |
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23 / 44 page ![]() Temperature (qC) -40 -20 0 20 40 60 80 100 120 -3 -2 -1 0 1 2 3 IS(ON) IS(OFF) D008 Figure 8-2. Leakage Current vs Temperature 8.3.6 Ultra-Low Charge Injection The TMUX111x devices have a transmission gate topology, as shown in Figure 8-3. Any mismatch in the stray capacitance associated with the NMOS and PMOS causes an output level change whenever the switch is opened or closed. The TMUX111x devices have special charge-injection cancellation circuitry that reduces the source-to-drain charge injection to -1.5pC at VS = 1V as shown in Figure 8-4. S D C GDP C GDN C GSN C GSP OFF ON OFF ON Figure 8-3. Transmission Gate Topology VS - Source Voltage (V) 0 1 2 3 4 5 -20 -15 -10 -5 0 5 10 15 20 VDD = 5 V VDD = 3.3 V D011 Figure 8-4. Charge Injection vs Source Voltage www.ti.com TMUX1111, TMUX1112, TMUX1113 SCDS408C – FEBRUARY 2019 – REVISED DECEMBER 2023 Copyright © 2023 Texas Instruments Incorporated Submit Document Feedback 23 Product Folder Links: TMUX1111 TMUX1112 TMUX1113 |
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