| Electronic Components Datasheet Search |
|
SC2569 Datasheet(PDF) 10 Page - List of Unclassifed Manufacturers |
|
|
|||||||||||||||||||||||||||||
SC2569 Datasheet(HTML) 10 Page - List of Unclassifed Manufacturers |
|
10 / 13 page ![]() SC2569 Safety-Chip © Safety-Chip Micro 10 www.safety-chip.com SC2569_Datasheet_V1.0_EN SC2569 current mode PWM control. The switch current is detected by a sense resistor into the SENSE pin. An internal leading edge blanking circuit chops off the sensed voltage spike at initial internal power MOSFET on state due to snubber diode reverse recovery and surge gate current of power MOSFET. The current limiting comparator is disabled and cannot turn off the internal power MOSFET during the blanking period. The PWM duty cycle is determined by the current sense input voltage and the FB input voltage. Internal Synchronized Slope Compensation Built-in slope compensation circuit adds voltage ramp onto the current sense input voltage for PWM generation. This greatly improves the close loop stability at CCM and prevents the sub-harmonic oscillation and thus reduces the output ripple voltage. Over Temperature Protection A NTC resistor in series with a regular resistor should connect between RT and GND for temperature sensing and protection. NTC resistor value becomes lower when the ambient temperatures rise. With the fixed internal current IRT flowing through the resistors, the voltage at RT pin becomes lower at high temperature. The internal OTP circuit is triggered and shutdown the MOSFET when the sensed input voltage is lower than VTH_OTP. Gate Drive SC2269 GATE is connected to the gate of an external MOSFET for power switch control. Too weak the gate drive strength results in higher conduction and switch loss of MOSFET while too strong gate drive output compromises the EMI. A good trade-off is achieved through the built-in totem pole gate design with right output strength and dead time control. The low idle loss and good EMI system design is easier to achieve with this dedicated control scheme. An internal 18V clamp is added for MOSFET gate protection at higher than expected VDD input. Protection Controls Good power supply system reliability is achieved with auto-recovery protection features including Cycle-by-Cycle current limiting (OCP), Under Voltage Lockout on VDD (UVLO), Over Temperature Protection (OTP), VDD Over Voltage Protection (OVP). The OCP threshold value is self adjusted lower at higher current into VIN pin. This OCP threshold slope adjustment helps to compensate the increased output power limit at higher AC voltage caused by inherent Over-Current sensing and control delay. A constant output power limit is achieved with recommended OCP compensation scheme on SC2569. At output overload condition when FB input voltage exceeds power limit threshold value for more than TD_PL, control circuit reacts to shut down the power MOSFET. It restarts when VDD voltage drops below UVLO limit. Similarly, when an Over Temperature condition is detected, control circuit shutdowns the power MOSFET. SC2569 resumes the operation when temperature drops below the hysteresis value. VDD is supplied with transformer auxiliary winding output. It is clamped when VDD is higher than 35V. MOSFET is shut down when VDD drops below VDD_ON limit and device enters power on startup sequence thereafter. |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |