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TDA2SA Datasheet(PDF) 161 Page - Texas Instruments

Part # TDA2SA
Description  TDA2x ADAS Applications Processor 23mm Package (ABC Package) Silicon Revision 2.0
PDF  427 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

TDA2SA Datasheet(HTML) 161 Page - Texas Instruments

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TDA2SX, TDA2SG, TDA2SA
TDA2HG, TDA2HV, TDA2HF, TDA2LF
www.ti.com
SPRS951F – DECEMBER 2015 – REVISED MAY 2019
Submit Documentation Feedback
Product Folder Links: TDA2SX TDA2SG TDA2SA TDA2HG TDA2HV TDA2HF TDA2LF
Specifications
Copyright © 2015–2019, Texas Instruments Incorporated
Table 5-11. Dual Voltage LVCMOS I2C DC Electrical Characteristics (continued)
PARAMETER
MIN
NOM
MAX
UNIT
VOL3
Output low-level threshold open-drain at 3-mA
sink current
0.2*VDDS
V
IOLmin
Low-level output current @VOL=0.2*VDDS
3
mA
tOF
Output fall time from VIHmin to VILmax with a bus
capacitance CB from 10 pF to 400 pF
20+0.1*Cb
250
ns
I2C Standard Mode – 3.3 V
VIH
Input high-level threshold
0.7*VDDS
V
VIL
Input low-level threshold
0.3*VDDS
V
Vhys
Hysteresis
0.05*VDDS
V
IIN
Input current at each I/O pin with an input voltage
between 0.1*VDDS to 0.9*VDDS
31
80
µA
IOZ
IOZ(IPAD Current) for BIDI cell. This current is
contributed by the tristated driver leakage + input
current of the Rx + weak pullup/pulldown leakage.
PAD is swept from 0 to VDDS and the Max(I(PAD))
is measured and is reported as IOZ
31
80
µA
CIN
Input capacitance
10
pF
VOL3
Output low-level threshold open-drain at 3-mA
sink current
0.4
V
IOLmin
Low-level output current @VOL=0.4V
3
mA
IOLmin
Low-level output current @VOL=0.6V for full drive
load (400pF/400KHz)
6
mA
tOF
Output fall time from VIHmin to VILmax with a bus
capacitance CB from 5 pF to 400 pF
250
ns
I2C Fast Mode – 3.3 V
VIH
Input high-level threshold
0.7*VDDS
V
VIL
Input low-level threshold
0.3*VDDS
V
Vhys
Hysteresis
0.05*VDDS
V
IIN
Input current at each I/O pin with an input voltage
between 0.1*VDDS to 0.9*VDDSS
31
80
µA
IOZ
IOZ(IPAD Current) for BIDI cell. This current is
contributed by the tristated driver leakage + input
current of the Rx + weak pullup/pulldown leakage.
PAD is swept from 0 to VDDS and the Max(I(PAD))
is measured and is reported as IOZ
31
80
µA
CIN
Input capacitance
10
pF
VOL3
Output low-level threshold open-drain at 3-mA
sink current
0.4
V
IOLmin
Low-level output current @VOL=0.4V
3
mA
IOLmin
Low-level output current @VOL=0.6V for full drive
load (400pF/400KHz)
6
mA
tOF
Output fall time from VIHmin to VILmax with a bus
capacitance CB from 10 pF to 200 pF (Proper
External Resistor Value should be used as per
I2C spec)
20+0.1*Cb
250
ns
Output fall time from VIHmin to VILmax with a bus
capacitance CB from 300 pF to 400 pF (Proper
External Resistor Value should be used as per
I2C spec)
40
290
(1) VDDS stands for corresponding power supply (that is vddshv3). For more information on the power supply name and the corresponding
ball, see Table 4-2, POWER [11] column.
5.7.4
IQ1833 Buffers DC Electrical Characteristics
Table 5-12 summarizes the DC electrical characteristics for IQ1833 Buffers.



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