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TDA2SA Datasheet(PDF) 163 Page - Texas Instruments

Part # TDA2SA
Description  TDA2x ADAS Applications Processor 23mm Package (ABC Package) Silicon Revision 2.0
PDF  427 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

TDA2SA Datasheet(HTML) 163 Page - Texas Instruments

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TDA2SX, TDA2SG, TDA2SA
TDA2HG, TDA2HV, TDA2HF, TDA2LF
www.ti.com
SPRS951F – DECEMBER 2015 – REVISED MAY 2019
Submit Documentation Feedback
Product Folder Links: TDA2SX TDA2SG TDA2SA TDA2HG TDA2HV TDA2HF TDA2LF
Specifications
Copyright © 2015–2019, Texas Instruments Incorporated
Table 5-14. LVCMOS OSC Buffers DC Electrical Characteristics (continued)
PARAMETER
MIN
NOM
MAX
UNIT
1.8-V Mode
VIH
Input high-level threshold
0.65 *
VDDS
V
VIL
Input low-level threshold
0.35 *
VDDS
V
VHYS
Input hysteresis voltage
150
mV
CPAD
Pad capacitance (including package capacitance)
3
pF
(1) VDDS stands for corresponding power supply (that is vdda_rtc). For more information on the power supply name and the corresponding
ball, see Table 4-2, POWER [11] column.
5.7.7
BC1833IHHV Buffers DC Electrical Characteristics
Table 5-15 summarizes the DC electrical characteristics for BC1833IHHV Buffers.
Table 5-15. BC1833IHHV Buffers DC Electrical Characteristics
PARAMETER
MIN
NOM
MAX
UNIT
Signal Names in MUXMODE 0: on_off;
Balls: Y11;
1.8-V Mode
VOH
Output high-level threshold (IOH = 2 mA)
VDDS-
0.45
V
VOL
Output low-level threshold (IOL = 2 mA)
0.45
V
IDRIVE
Pin Drive strength at PAD Voltage = 0.45V or VDDS-0.45V
6
mA
IIN
Input current at each I/O pin
6
12
µA
IOZ
IOZ(IPAD Current) for BIDI cell. This current is contributed by
the tristated driver leakage + input current of the Rx + weak
pullup/pulldown leakage. PAD is swept from 0 to VDDS and
the Max(I(PAD)) is measured and is reported as IOZ
6
µA
CPAD
Pad capacitance (including package capacitance)
4
pF
3.3-V Mode
VOH
Output high-level threshold (IOH =100µA)
VDDS-0.2
V
VOL
Output low-level threshold (IOL = 100µA)
0.2
V
IDRIVE
Pin Drive strength at PAD Voltage = 0.45V or VDDS-0.45V
6
mA
IIN
Input current at each I/O pin
60
µA
IOZ
IOZ(IPAD Current) for BIDI cell. This current is contributed by
the tristated driver leakage + input current of the Rx + weak
pullup/pulldown leakage. PAD is swept from 0 to VDDS and
the Max(I(PAD)) is measured and is reported as IOZ
60
µA
CPAD
Pad capacitance (including package capacitance)
4
pF
(1) VDDS stands for corresponding power supply (that is vddshv5). For more information on the power supply name and the corresponding
ball, see Table 4-2, POWER [11] column.
5.7.8
USBPHY DC Electrical Characteristics
NOTE
USB1 instance is compliant with the USB3.0 SuperSpeed Transmitter and Receiver
Normative Electrical Parameters as defined in the USB3.0 Specification Rev 1.0 dated Jun 6,
2011.



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