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TDA2SA Datasheet(PDF) 163 Page - Texas Instruments |
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TDA2SA Datasheet(HTML) 163 Page - Texas Instruments |
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163 / 427 page ![]() 163 TDA2SX, TDA2SG, TDA2SA TDA2HG, TDA2HV, TDA2HF, TDA2LF www.ti.com SPRS951F – DECEMBER 2015 – REVISED MAY 2019 Submit Documentation Feedback Product Folder Links: TDA2SX TDA2SG TDA2SA TDA2HG TDA2HV TDA2HF TDA2LF Specifications Copyright © 2015–2019, Texas Instruments Incorporated Table 5-14. LVCMOS OSC Buffers DC Electrical Characteristics (continued) PARAMETER MIN NOM MAX UNIT 1.8-V Mode VIH Input high-level threshold 0.65 * VDDS V VIL Input low-level threshold 0.35 * VDDS V VHYS Input hysteresis voltage 150 mV CPAD Pad capacitance (including package capacitance) 3 pF (1) VDDS stands for corresponding power supply (that is vdda_rtc). For more information on the power supply name and the corresponding ball, see Table 4-2, POWER [11] column. 5.7.7 BC1833IHHV Buffers DC Electrical Characteristics Table 5-15 summarizes the DC electrical characteristics for BC1833IHHV Buffers. Table 5-15. BC1833IHHV Buffers DC Electrical Characteristics PARAMETER MIN NOM MAX UNIT Signal Names in MUXMODE 0: on_off; Balls: Y11; 1.8-V Mode VOH Output high-level threshold (IOH = 2 mA) VDDS- 0.45 V VOL Output low-level threshold (IOL = 2 mA) 0.45 V IDRIVE Pin Drive strength at PAD Voltage = 0.45V or VDDS-0.45V 6 mA IIN Input current at each I/O pin 6 12 µA IOZ IOZ(IPAD Current) for BIDI cell. This current is contributed by the tristated driver leakage + input current of the Rx + weak pullup/pulldown leakage. PAD is swept from 0 to VDDS and the Max(I(PAD)) is measured and is reported as IOZ 6 µA CPAD Pad capacitance (including package capacitance) 4 pF 3.3-V Mode VOH Output high-level threshold (IOH =100µA) VDDS-0.2 V VOL Output low-level threshold (IOL = 100µA) 0.2 V IDRIVE Pin Drive strength at PAD Voltage = 0.45V or VDDS-0.45V 6 mA IIN Input current at each I/O pin 60 µA IOZ IOZ(IPAD Current) for BIDI cell. This current is contributed by the tristated driver leakage + input current of the Rx + weak pullup/pulldown leakage. PAD is swept from 0 to VDDS and the Max(I(PAD)) is measured and is reported as IOZ 60 µA CPAD Pad capacitance (including package capacitance) 4 pF (1) VDDS stands for corresponding power supply (that is vddshv5). For more information on the power supply name and the corresponding ball, see Table 4-2, POWER [11] column. 5.7.8 USBPHY DC Electrical Characteristics NOTE USB1 instance is compliant with the USB3.0 SuperSpeed Transmitter and Receiver Normative Electrical Parameters as defined in the USB3.0 Specification Rev 1.0 dated Jun 6, 2011. |
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