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TDA2SA Datasheet(PDF) 166 Page - Texas Instruments

Part # TDA2SA
Description  TDA2x ADAS Applications Processor 23mm Package (ABC Package) Silicon Revision 2.0
PDF  427 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

TDA2SA Datasheet(HTML) 166 Page - Texas Instruments

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TDA2SX, TDA2SG, TDA2SA
TDA2HG, TDA2HV, TDA2HF, TDA2LF
SPRS951F – DECEMBER 2015 – REVISED MAY 2019
www.ti.com
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Product Folder Links: TDA2SX TDA2SG TDA2SA TDA2HG TDA2HV TDA2HF TDA2LF
Specifications
Copyright © 2015–2019, Texas Instruments Incorporated
Table 5-17. Dual Voltage LVCMOS DC Electrical Characteristics
PARAMETER
MIN
NOM
MAX
UNIT
1.8-V Mode
VIH
Input high-level threshold
0.65*VDDS
V
VIL
Input low-level threshold
0.35*VDDS
V
VHYS
Input hysteresis voltage
100
mV
VOH
Output high-level threshold (IOH = 2 mA)
VDDS-0.45
V
VOL
Output low-level threshold (IOL = 2 mA)
0.45
V
IDRIVE
Pin Drive strength at PAD Voltage = 0.45V or
VDDS-0.45V
6
mA
IIN
Input current at each I/O pin
16
µA
IOZ
IOZ(IPAD Current) for BIDI cell. This current is
contributed by the tristated driver leakage + input
current of the Rx + weak pullup/pulldown leakage.
PAD is swept from 0 to VDDS and the Max(I(PAD))
is measured and is reported as IOZ
16
µA
IIN with pulldown
enabled
Input current at each I/O pin with weak pulldown
enabled measured when PAD = VDDS
50
120
210
µA
IIN with pullup
enabled
Input current at each I/O pin with weak pullup
enabled measured when PAD = 0
60
120
200
µA
CPAD
Pad capacitance (including package capacitance)
4
pF
ZO
Output impedance (drive strength)
40
Ω
3.3-V Mode
VIH
Input high-level threshold
2
V
VIL
Input low-level threshold
0.8
V
VHYS
Input hysteresis voltage
200
mV
VOH
Output high-level threshold (IOH = 100 µA)
VDDS-0.2
V
VOL
Output low-level threshold (IOL = 100 µA)
0.2
V
IDRIVE
Pin Drive strength at PAD Voltage = 0.45V or
VDDS-0.45V
6
mA
IIN
Input current at each I/O pin
65
µA
IOZ
IOZ(IPAD Current) for BIDI cell. This current is
contributed by the tristated driver leakage + input
current of the Rx + weak pullup/pulldown leakage.
PAD is swept from 0 to VDDS and the Max(I(PAD))
is measured and is reported as IOZ
65
µA
IIN with pulldown
enabled
Input current at each I/O pin with weak pulldown
enabled measured when PAD = VDDS
40
100
200
µA
IIN with pullup
enabled
Input current at each I/O pin with weak pullup
enabled measured when PAD = 0
10
100
290
µA
CPAD
Pad capacitance (including package capacitance)
4
pF
ZO
Output impedance (drive strength)
40
Ω
(1) VDDS stands for corresponding power supply. For more information on the power supply name and the corresponding ball, see Table 4-
2, POWER [11] column.
5.7.11 SATAPHY DC Electrical Characteristics
NOTE
The SATA module is compliant with the electrical parameters specified in the SATA-IO SATA
Specification, Revision 3.2, August 7, 2013.



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