MIC26901

DS20007047B-page 4

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2025-2026 Microchip Technology Inc. and its subsidiaries

FB Bias Current

—

50

—

nA

VFB = 0.8V

Enable Control

EN Logic Level High

1.8

1.1

—

V

—

EN Logic Level Low

—

1

0.6

V

—

EN Bias Current

—

5.1

30

µA

VEN = 12V

Oscillator

Switching Frequency

450

706

750

kHz

Note 2, VFB = 0V

Maximum Duty Cycle

—

82

—

%

Note 3, VFB = 1.0V

Minimum Duty Cycle

—

0

—

%

VFB = 1.0V

Minimum Off-Time

—

300

—

ns

—

Soft-Start

Soft-Start Time

—

3.9

—

ms

—

Short-Circuit Protection

Peak Inductor Current-Limit

Threshold

12.5

20

25

A

VFB = 0.8V, TJ = +25°C

11.25

21

25

VFB = 0.8V, TJ = +125°C

Short-Circuit Current

—

8

—

A

VFB = 0V

Internal FETs

Top-MOSFET RDS(ON)

—

23

—

mΩ

ISW = 3A

Bottom-MOSFET RDS(ON)

—

7.9

—

mΩ

ISW = 3A

SW Leakage Current

—

12.9

60

µA

VEN = 0V

VIN Leakage Current

—

0.1

25

µA

VEN = 0V

Power Good (PG)

PG Threshold Voltage

85

91

95

%VOUT Sweep VFB from Low to High

PG Hysteresis

—

5.5

—

%VOUT Sweep VFB from High to Low

PG Delay Time

—

98

—

µs

Sweep VFB from Low to High

PG Low Voltage

—

53

200

mV

Sweep VFB < 0.9 x VNOM, IPG = 1 mA

Thermal Protection

Overtemperature Shutdown

—

160

—

°C

TJ rising

Overtemperature Shutdown

Hysteresis

—

15

—

°C

—

Note 1: Specification for packaged product only.

2: Measured in test mode.

3: The maximum duty cycle is limited by the fixed mandatory off-time (tOFF) of typically 300 ns.

ELECTRICAL CHARACTERISTICS (CONTINUED)

PVIN = VIN = VEN = 12V, VBST – VSW = 5V; TA = +25°C, unless otherwise noted. Bold values valid for –40°C ≤ TJ ≤

+125°C. Note 1

Parameter

Min.

Typ.

Max.

Units

Conditions