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OPA818DBVT Datasheet(PDF) 24 Page - Texas Instruments |
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OPA818DBVT Datasheet(HTML) 24 Page - Texas Instruments |
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24 / 39 page ![]() for good thermal conduction when operating at high ambient temperatures. If more than one heat-spreading plane is available, connect them by a number of vias to further improve thermal conduction. 5. Do not socket a high-speed device such as the OPA818. The additional lead length and pin-to-pin capacitance introduced by the socket potentially creates an extremely troublesome parasitic network that potentially prevent a smooth, stable frequency response. Best results are obtained by soldering the OPA818 onto the board. 8.4.1.1 Thermal Considerations The OPA818 does not require heat sinking or airflow in most applications. The maximum allowed junction temperature sets the maximum allowed internal power dissipation, and is described in the following paragraph. Do not exceed a maximum junction temperature of 105°C. The operating junction temperature (TJ) is given by TA + PD × RθJA. The total internal power dissipation (PD) is the sum of quiescent power (PDQ) and additional power dissipated in the output stage (PDL) to deliver load power. Quiescent power is simply the specified no-load supply current times the total supply voltage across the device. The PDL depends on the output signal and load. For a grounded resistive load, the PDL is at a maximum when the output is fixed at a voltage equal to 1/2 of either supply voltage (for balanced bipolar supplies). Under this condition, PDL = VS 2 / (4 × RL), where RL includes feedback network loading. Be aware that the power in the output stage, and not into the load, determines internal power dissipation. As a worst-case example, compute the maximum TJ using the OPA818 in the circuit of Figure 8-1 operating at a maximum specified ambient temperature of 85°C and driving a grounded 100-Ω load. PD = 10 V × 27.7 mA + 52 / (4 × (100 Ω || 350.9 Ω)) ≅ 357 mW Maximum TJ = 85°C + (0.357 W × 54.6°C/W) = 104.5°C. In the circuit of Figure 8-1, all practical scenarios are able to operate at a lower internal power and junction temperature. 8.4.2 Layout Example Place gain and feedback resistors close to pins to minimize stray capacitance Place bypass capacitor close to power pins Connect the thermal pad to a heat spreading plane, generally ground 1 8 2 7 3 6 4 5 CBYP RF RG RS CBYP Thermal Pad Connect PD to VS+ to enable the amplifier Ground and power plane removed from inner layers. Ground fill on outer layers also removed. Ground and power plane exist on inner layers. CBYP RF RG + – VS– CBYP VS+ Representative schematic RS To Load No Connect Figure 8-9. Layout Recommendation When configuring the OPA818 as a transimpedance amplifier take extra care to minimize the inductance between the avalanche photodiode (APD) and the amplifier. Always place the photodiode on the same side of the PCB as the amplifier. Placing the amplifier and the APD on opposite sides of the PCB increases the parasitic effects due to via inductance. APD packaging can be quite large, which often requires the APD to be placed further away from the amplifier than ideal. The added distance between the two device results in increased inductance between the APD and op-amp feedback network (see also Equation 4). The added inductance is OPA818 SBOS940B – MAY 2019 – REVISED DECEMBER 2025 www.ti.com 24 Submit Document Feedback Copyright © 2025 Texas Instruments Incorporated Product Folder Links: OPA818 |
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