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OPA818DBVT Datasheet(PDF) 24 Page - Texas Instruments

Part # OPA818DBVT
Description  OPA818 2.7GHz, High-Voltage, FET-Input, Low-Noise, Operational Amplifier
PDF  39 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

OPA818DBVT Datasheet(HTML) 24 Page - Texas Instruments

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for good thermal conduction when operating at high ambient temperatures. If more than one heat-spreading
plane is available, connect them by a number of vias to further improve thermal conduction.
5. Do not socket a high-speed device such as the OPA818. The additional lead length and pin-to-pin
capacitance introduced by the socket potentially creates an extremely troublesome parasitic network that
potentially prevent a smooth, stable frequency response. Best results are obtained by soldering the OPA818
onto the board.
8.4.1.1 Thermal Considerations
The OPA818 does not require heat sinking or airflow in most applications. The maximum allowed junction
temperature sets the maximum allowed internal power dissipation, and is described in the following paragraph.
Do not exceed a maximum junction temperature of 105°C.
The operating junction temperature (TJ) is given by TA + PD × RθJA. The total internal power dissipation (PD)
is the sum of quiescent power (PDQ) and additional power dissipated in the output stage (PDL) to deliver load
power. Quiescent power is simply the specified no-load supply current times the total supply voltage across the
device. The PDL depends on the output signal and load. For a grounded resistive load, the PDL is at a maximum
when the output is fixed at a voltage equal to 1/2 of either supply voltage (for balanced bipolar supplies). Under
this condition, PDL = VS 2 / (4 × RL), where RL includes feedback network loading.
Be aware that the power in the output stage, and not into the load, determines internal power dissipation.
As a worst-case example, compute the maximum TJ using the OPA818 in the circuit of Figure 8-1 operating at a
maximum specified ambient temperature of 85°C and driving a grounded 100-Ω load.
PD = 10 V × 27.7 mA + 52 / (4 × (100 Ω || 350.9 Ω)) ≅ 357 mW
Maximum TJ = 85°C + (0.357 W × 54.6°C/W) = 104.5°C.
In the circuit of Figure 8-1, all practical scenarios are able to operate at a lower internal power and junction
temperature.
8.4.2 Layout Example
Place gain and feedback resistors
close to pins to minimize stray
capacitance
Place bypass capacitor
close to power pins
Connect the thermal pad to a heat
spreading plane, generally ground
1
8
2
7
3
6
4
5
CBYP
RF
RG
RS
CBYP
Thermal
Pad
Connect PD to VS+ to enable the
amplifier
Ground and power plane removed
from inner layers. Ground fill on
outer layers also removed.
Ground and power plane exist on
inner layers.
CBYP
RF
RG
+
–
VS–
CBYP
VS+
Representative schematic
RS
To
Load
No Connect
Figure 8-9. Layout Recommendation
When configuring the OPA818 as a transimpedance amplifier take extra care to minimize the inductance
between the avalanche photodiode (APD) and the amplifier. Always place the photodiode on the same side of
the PCB as the amplifier. Placing the amplifier and the APD on opposite sides of the PCB increases the parasitic
effects due to via inductance. APD packaging can be quite large, which often requires the APD to be placed
further away from the amplifier than ideal. The added distance between the two device results in increased
inductance between the APD and op-amp feedback network (see also Equation 4). The added inductance is
OPA818
SBOS940B – MAY 2019 – REVISED DECEMBER 2025
www.ti.com
24
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Product Folder Links: OPA818



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