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TMS320VC5506 Datasheet(PDF) 32 Page - Texas Instruments |
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TMS320VC5506 Datasheet(HTML) 32 Page - Texas Instruments |
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32 / 120 page ![]() Functional Overview 32 October 2006 − Revised January 2008 SPRS375C 3.1.4.2 GHH and ZHH Package(s) Memory Map The GHH and ZHH package(s) features 21 address bits representing 2M-byte linear address for asynchronous memories per CE space. Due to address row/column multiplexing, address reach for SDRAM devices is 4M bytes for each CE space. The largest SDRAM device that can be used with the 5506 in a GHH and ZHH package is 128M-bit SDRAM. 000000 DARAM (32K − 192) Bytes 008000 DARAM‡ 32K Bytes 010000 SARAM§ 64K Bytes External¶ − CE0 040000 400000 800000 C00000 FF0000 64K Bytes FFFFFF External¶ − CE1 External¶ − CE2 External¶ − CE3 Block Size Byte Address (Hex)† (if MPNMC=0) ROM|| (if MPNMC=1) External¶ − CE3 2M Bytes − Asynchronous 4M Bytes − SDRAM (MPNMC = 1) 4M Bytes − 64K Bytes if internal ROM selected (MPNMC = 0) 2M Bytes − Asynchronous 4M Bytes − SDRAM 2M Bytes − Asynchronous 4M Bytes − SDRAM 2M Bytes − Asynchronous 4M Bytes − 128K Bytes SDRAM# Memory Blocks † Address shown represents the first byte address in each block. ‡ Dual-access RAM (DARAM): two accesses per cycle per block, 8 blocks of 8K bytes. § Single-access RAM (SARAM): one access per cycle per block, 8 blocks of 8K bytes. ¶ External memory spaces are selected by the chip-enable signal shown (CE[0:3]). Supported memory types include: asynchronous static RAM (SRAM) and synchronous DRAM (SDRAM). # The minus 128K bytes consists of 32K-byte DARAM access, 32K-byte DARAM, and 64K-byte SARAM. || Read-only memory (ROM): one access every two cycles. 0000C0 MMR (Reserved) 020000 Reserved Figure 3−3. TMS320VC5506 Memory Map (GHH and ZHH Packages) |
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