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INA151 Datasheet(PDF) 16 Page - Texas Instruments |
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INA151 Datasheet(HTML) 16 Page - Texas Instruments |
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16 / 34 page ![]() 7 Detailed Description 7.1 Overview 7.1.1 INA151 Transconductance Architecture Overview The INA151 employs a transconductance-based architecture utilizing current-feedback amplifier topology to achieve low bias currents of 20μA and a common-mode voltage of 110V above negative supply. The block diagram illustrated in Figure 7-1 demonstrates the dual-stage approach of this architecture. In the first stage the differential voltage is translated to a differential current through R1. The differential output current is further converted into a single-ended output voltage in the second amplifier stage. The closed-loop voltage gain VOUT/VIN is established by the ratio of the internal precision resistors R3 by R1. Consequently, gain accuracy is mainly limited by the resistor matching tolerance between the signal paths, making precision thin-film resistor implementation critical for the performance. These key architectural features make the INA151 ideally suited for serial stacked battery cell monitoring applications, enabling precise voltage measurements across up to 20 series-connected battery cells. The INA151 encompasses four gain variants to address . The INA151A version offers gain option of 1, while the INA151B, INA151C and INA151D versions offer gain options of ⅔, ½ and ¼ respectively. The multiple gain variants are designed to accommodate the full-scale input ranges of various ADC requirements, maximizing measurement resolution and dynamic range. 7.1.2 Multiplexing Capability The integrated enable/disable control with high-impedance output state facilitates multiplexed operation modes. This architecture enables parallel connection of multiple INA151 devices with common output nodes, allowing sequential amplifier selection for single ADC sampling applications through digital enable control. The INA151 is available in industry standard packages including SOT-23. 7.2 Functional Block Diagram R1 R1 + – + – VS REF VOUT VCM VS+ VCM VDIFF Max. ±5V DGND EN VS+ VSub RS RS R3 R3 R2 R2 500k 500k 62.5k 62.5k Variant A (G=1): 500k Variant B (G=2/3): 333.33k Variant C (G=½ ): 250k Variant D (G=¼): 125k Figure 7-1. INA151A Simplified Internal Schematic INA151 SLVSIL6B – JANUARY 2026 – REVISED MARCH 2026 www.ti.com 16 Submit Document Feedback Copyright © 2026 Texas Instruments Incorporated Product Folder Links: INA151 |
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