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M58BF008 Datasheet(PDF) 12 Page - STMicroelectronics |
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M58BF008 Datasheet(HTML) 12 Page - STMicroelectronics |
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12 / 36 page ![]() M58BF008 12/36 Program (PG). The Program instruction consists of two write cycles, the first is the program set-up command 40h at the address 00000h. This is fol- lowed by a second write cycle to latch the address and data to be programmed. This second com- mand starts the P/E.C. A program operation can be aborted by writing FFFFFFFFh to any address after the program set-up command has been giv- en. While programming is in progress only the Read Status Register and Program Suspend in- structions are valid. Read operations output the Status Register after the program operation has started. The Status Register bit 7 is ’0’ while programming is in progress and is set to ’1’ when it is completed. Af- ter completion the Status Register bit 4 is set to ’1’ if there has been a programming failure. Programming should not be attempted when the VPP Program/Erase Supply Voltage is out of the range VPP1 or VPPH as the results will be uncer- tain. The Status Register bit 3 is set to ’1’ if VPP is not within the allowed ranges when programming is attempted or if it falls out of the ranges during program execution. The program operation aborts if VPP drops out of the allowed ranges or if Reset/Power-Down RP falls to VIL. As data integrity cannot be guaranteed when the program operation is aborted, the mem- ory block must be erased and programming re- peated. A Clear Status Register instruction must be given to clear the Status Register bits. Overlay Block Program (OBPG). The Overlay Block Program instruction consists of two write cy- cles, the first is the program set-up command 04h at the address 00000h. This is followed by a sec- ond write cycle to latch the address and data to be programmed. This second command starts the P/ E.C. The operation is executed as described for the Program (PG) instruction of the Main memory ar- ray. While programming of the Overlay block in progress only the Read Status Register instruction is valid. Program/Erase Suspend (PES). As memory erasure takes of the order of seconds to complete and programming a few microseconds, a Pro- gram/Erase Suspend instruction is implemented. Program/Erase Suspend interrupts the operations to allow reading or programming in a block other than one in which program or erase is suspended. A Program/Erase Suspend instruction is accepted only during a Program or Erase instruction. When the Program/Erase Suspend command is written to the Command Interface, the P/E.C. freezes the program or erase operation. The suspended pro- gram or erase operation may be restarted by using the Program/Erase Resume instruction. Program/ Erase Suspend is not allowed during the Overlay block program/erase operation and the command is ignored. The Program/Erase Suspend instruction consists of one write cycle giving the command B0h at the address 00000h. If a program operation is in progress when the in- struction is given, the Status Register bits 4 and 6 are set to ’1’ after it has been suspended. If an erase operation is in progress when the instruction is given, the Status Register bits 5 and 6 are set to ’1’ after it has been suspended. The valid instructions that may be given to the memory while programing is suspended are – Read Memory Array (RD) – Read Status Register (RSR) – Read Electronic Signature (RSIG) – Program/Erase Resume (PER) In addition, while erasure is suspended, the Pro- gram (PG) instruction may be given. In Program/Erase Suspend mode the memory can be placed in a pseudo-standby mode by taking Chip Enable /E to VIH to reduce power consump- tion. Program/Erase Resume (PER). If a Program/ Erase Suspend instruction has previously been executed, then the operation may be resumed by giving the command D0h at the address 00000h. The Status Register bits 4, 5 and 6 are cleared when program or erase resumes. A Read Memory Array instruction will output the Status Register af- ter program or erase is resumed. Suggested flow charts for software that uses pro- gramming, erasure and program/erase suspend/ resume operations are shown in Figures 11, 12, 13 and 14. Asynchronous/Synchronous Read Toggle (ART). Asynchronous Read Memory Array is the memory default at power-up or when returning from Power- Down. To read data in Synchronous mode, either single or burst, the Asynchronous/Synchronous Read Toggle instruction must be used. The Asynchronous/Synchronous Read Toggle in- struction consists of one write cycle giving the command 60h at the address 00000h. Two con- secutive instructions are not recognised and an- other Instruction, for example the Read Memory Array, must be given before another Asynchro- nous/Synchronous Read Toggle will be recogn- ised. |
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