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M58BF008 Datasheet(PDF) 12 Page - STMicroelectronics

Part # M58BF008
Description  8 Mbit 256Kb x32, Burst Flash Memory
PDF  36 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M58BF008 Datasheet(HTML) 12 Page - STMicroelectronics

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Program (PG). The Program instruction consists
of two write cycles, the first is the program set-up
command 40h at the address 00000h. This is fol-
lowed by a second write cycle to latch the address
and data to be programmed. This second com-
mand starts the P/E.C. A program operation can
be aborted by writing FFFFFFFFh to any address
after the program set-up command has been giv-
en. While programming is in progress only the
Read Status Register and Program Suspend in-
structions are valid.
Read operations output the Status Register after
the program operation has started. The Status
Register bit 7 is ’0’ while programming is in
progress and is set to ’1’ when it is completed. Af-
ter completion the Status Register bit 4 is set to ’1’
if there has been a programming failure.
Programming should not be attempted when the
VPP Program/Erase Supply Voltage is out of the
range VPP1 or VPPH as the results will be uncer-
tain. The Status Register bit 3 is set to ’1’ if VPP is
not within the allowed ranges when programming
is attempted or if it falls out of the ranges during
program execution.
The program operation aborts if VPP drops out of
the allowed ranges or if Reset/Power-Down RP
falls to VIL. As data integrity cannot be guaranteed
when the program operation is aborted, the mem-
ory block must be erased and programming re-
peated.
A Clear Status Register instruction must be given
to clear the Status Register bits.
Overlay Block Program (OBPG). The
Overlay
Block Program instruction consists of two write cy-
cles, the first is the program set-up command 04h
at the address 00000h. This is followed by a sec-
ond write cycle to latch the address and data to be
programmed. This second command starts the P/
E.C.
The operation is executed as described for the
Program (PG) instruction of the Main memory ar-
ray.
While programming of the Overlay block in
progress only the Read Status Register instruction
is valid.
Program/Erase Suspend (PES). As
memory
erasure takes of the order of seconds to complete
and programming a few microseconds, a Pro-
gram/Erase Suspend instruction is implemented.
Program/Erase Suspend interrupts the operations
to allow reading or programming in a block other
than one in which program or erase is suspended.
A Program/Erase Suspend instruction is accepted
only during a Program or Erase instruction. When
the Program/Erase Suspend command is written
to the Command Interface, the P/E.C. freezes the
program or erase operation. The suspended pro-
gram or erase operation may be restarted by using
the Program/Erase Resume instruction. Program/
Erase Suspend is not allowed during the Overlay
block program/erase operation and the command
is ignored.
The Program/Erase Suspend instruction consists
of one write cycle giving the command B0h at the
address 00000h.
If a program operation is in progress when the in-
struction is given, the Status Register bits 4 and 6
are set to ’1’ after it has been suspended. If an
erase operation is in progress when the instruction
is given, the Status Register bits 5 and 6 are set to
’1’ after it has been suspended.
The valid instructions that may be given to the
memory while programing is suspended are
– Read Memory Array (RD)
– Read Status Register (RSR)
– Read Electronic Signature (RSIG)
– Program/Erase Resume (PER)
In addition, while erasure is suspended, the Pro-
gram (PG) instruction may be given.
In Program/Erase Suspend mode the memory can
be placed in a pseudo-standby mode by taking
Chip Enable /E to VIH to reduce power consump-
tion.
Program/Erase Resume (PER). If a Program/
Erase Suspend instruction has previously been
executed, then the operation may be resumed by
giving the command D0h at the address 00000h.
The Status Register bits 4, 5 and 6 are cleared
when program or erase resumes. A Read Memory
Array instruction will output the Status Register af-
ter program or erase is resumed.
Suggested flow charts for software that uses pro-
gramming, erasure and program/erase suspend/
resume operations are shown in Figures 11, 12,
13 and 14.
Asynchronous/Synchronous Read Toggle (ART).
Asynchronous Read Memory Array is the memory
default at power-up or when returning from Power-
Down. To read data in Synchronous mode, either
single or burst, the Asynchronous/Synchronous
Read Toggle instruction must be used.
The Asynchronous/Synchronous Read Toggle in-
struction consists of one write cycle giving the
command 60h at the address 00000h. Two con-
secutive instructions are not recognised and an-
other Instruction, for example the Read Memory
Array, must be given before another Asynchro-
nous/Synchronous Read Toggle will be recogn-
ised.



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