M58BF008 datasheet(16/36 Pages) STMICROELECTRONICS

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M58BF008

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Table 15. DC Characteristics

(TA = –40 to 125°C; VDD =5V ± 10% and VDDQ = 3.3V ± 0.3V)

Symbol

Parameter

Test Conditi on

Min

Max

Unit

ILI

Input Leakage Current

≤ VIN ≤ VDDQ

±1

µA

ILO

Output Leakage Current

≤ VOUT ≤VDDQ

±10

µA

ILT1

Input Leakage Current pull-up

≤ VIN ≤ VDDQ

–20

–600

µA

ILIVPP

Input Leakage Current pull-down

≤ VPP ≤ 12.6

200

µA

ICC

Supply Current (Async. Read)

E = VIL,G= VIL, f = 5MHz

ICCB

Supply Current (Burst Read)

E= VIL,G = VIL, f = 40MHz

ICC1

Supply Current (Standby)

E = VIH,RP = VIH

µA

ICC2

Supply Current (Power-down)

RP = VIL

µA

ICC3

Supply Current (Program)

Program in Progress

VPP =VPP1

VPP =VPPH

ICC4

Supply Current (Erase)

Erase in Progress

VPP =VPP1

VPP =VPPH

IPP

Program Current (Read or Standby)

VPP ≥ VPP1

200

µA

IPP1

Program Current (Read or Standby)

VPP ≤ VPP1

±15

µA

IPP2

Program Current (Power-down)

RP = VIL

µA

IPP3

Program Current (Program)

Program in Progress

VPP =VPP1

VPP =VPPH

IPP4

Program Current (Erase)

Erase in Progress

VPP =VPP1

VPP =VPPH

VIL

Input Low Voltage

–0.3

0.1VDDQ

VIH

Input High Voltage

0.9VDDQ

VDDQ

+0.3

VOL

Output Low Voltage

IOL = 100µA,

VDD =VDD min,

VDDQ =VDDQ min

0.2

VOH

Output High Voltage

IOL = –100µA,

VDD =VDD min,

VDDQ =VDDQ min

VDDQ –0.2

VPP1

Program Voltage

(Program or Erase operations)

4.5

5.5

VPPH

Program Voltage

(Program or Erase operations)

11.4

12.6

VLKO

VDD Supply Voltage Lock-out

1.5

VPPLK

Program Voltage Lock-out

1.5

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