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M58BF008 Datasheet(PDF) 23 Page - STMicroelectronics

Part # M58BF008
Description  8 Mbit 256Kb x32, Burst Flash Memory
PDF  36 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M58BF008 Datasheet(HTML) 23 Page - STMicroelectronics

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M58BF008
Table 19. Synchronous Write AC Characteristics (1)
(TA = –40 to 125°C; VDD =5V ± 10% and VDDQ = 3.3V ± 0.3V)
Note: 1. See AC Testing Measurement conditions for timi ng measurements.
2. Sampled only, not 100% tested.
3. Time is measured to Status Register Read giving bit b7 = ’1’.
Symbol
Parameter
Min
Max
Unit
DCCLK
System Clock Duty Cycle
45
55
%
tAVCH
(2)
Address Valid to System Clock High
10
ns
tBLCH
(2)
Load Burst Address Low to System Clock High
10
ns
tCHAX
(2)
System Clock High to Address Transition
5
ns
tCHBH
(2)
System Clock High to Load Burst Address High
5
ns
tCHCL
System Clock Fall Time
3
ns
tCHQV1
(3)
System Clock High to Output Valid, Program
10
µs
tCHQV2
(3)
System Clock High to Output Valid, Erase
2.1
sec
tCHQX
(2)
System Clock High to Data Transition
5
ns
tCHWH
(2)
System Clock High to Write/Read High
5
ns
tCHWRH
(2)
System Clock High to Write Enable High
5
ns
tCLCH
System Clock Rise Time
3
ns
tCLCL
System Clock Period
25
ns
tELCH
Chip Enable Low to System Clock High
20
ns
tPHCH
Reset/Power-down High to System Clock High
200
ns
tQVCH
(2)
Data Valid to System Clock High
10
ns
tQVVPL
(2)
Output Valid to VPP out of range VPP1 or VPPH
0ns
tVPHCH
(2)
VPP High to System Clock High
200
ns
tWLCH
(2)
Write Enable Low to System Clock High
10
ns
tWRLCH
(2)
Write/Read Low to System Clock High
10
ns



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