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M58BF008 Datasheet(PDF) 26 Page - STMicroelectronics |
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M58BF008 Datasheet(HTML) 26 Page - STMicroelectronics |
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26 / 36 page ![]() M58BF008 26/36 Figure 12. Program Flowchart and Pseudo Code Note: 1. If an error is found, the Status Register must be cleared (CLRS instruction) before further P/E.C. operations. Write 40h/04h Command AI02663 Start Write Address & Data Read Status Register YES NO b7=1 YES NO b3=0 NO b4=0 VPP Invalid Error (1) Program Error (1) PG/OBPG instructions: – write 40h/04h command – write Address & Data (memory enters read status state after the PG instruction) do: – read status register (E or G must be toggled) while b7 = 1 If b3 = 1, VPP invalid error: – error handler If b4 = 1, Program error: – error handler YES End Table 21. Program, Erase Times and Program/Erase Endurance Cycles (TA = –40 to 125°C; VDD =5V ± 10% and VDDQ = 3.3V ± 0.3V) Parameter Test Condition s Min Typ Max Unit Main/Overlay Block Program Time VPP =VPPH 0.14 1.4 sec VPP =VPP1 0.18 1.8 sec Main/Overlay Block Erase Time VPP =VPPH 0.21 2.1 sec VPP =VPP1 0.33 3.3 sec Program/Erase Cycles (per Block) VPP =VPPH 1,000 cycles VPP =VPP1 10,000 cycles |
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