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AXBM2001 Datasheet(PDF) 8 Page - Zetex Semiconductors |
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AXBM2001 Datasheet(HTML) 8 Page - Zetex Semiconductors |
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8 / 14 page  MOSFET Power Transistors Power MOSFET devices are becoming increasingly popular and as regard the ZXBM200x provide a very good method of driving the motor phase windings. Figures 9 and 10 illustrate the methodology of the driver circuit. The components in Figures9&10 have a very similar topography to that of the Bipolar drive with again two variants, one with the direct Zener clamping and the second having active clamping. The main difference arising in the active clamping circuit in Figure 10 is the need for a diode in series with the active clamp Zener diode. This prevents the Zener being forward biased and thus detracting from the gate drive when the MOSFET is turned on. In the active clamp circuit there is also no need for any drain to source negative voltage protection as this will be achieved by the inherent body diode of the MOSFET. When using MOSFET devices it is a compromise between the Voltage rating and the RDS(on) of the MOSFET with a higher voltage rating producing a higher RDS(on). The aim therefore should always be to use the lowest voltage rating to suit the application as this will give the lowest full-speed RDS(on) related dissipation. The disadvantage is that there will be a slightly higher dissipation when using active clamping as this will be working harder to maintain a lower voltage when the fan is running at near to full speed. The latest generation of N channel trench MOSFETS from Zetex provide suitable solutions with the ZXMN6A11G and the ZXMN10A11G, 60V and 100V devices respectively, having been used in the applications described. Reverse Supply protection An increasingly common requirement for modern systems is for components and modules to have a degree of reverse supply protection. This is particularly so for Automotive applications. To achieve this a supply blocking diode is required in the Fan electronics. For the best performance from the ZXBM200x device it is best to provide separate diodes for the device and the winding supplies. This is illustrated in the full applications circuit in Figure 17. The main reason for this is that having blocked the reverse path to the power supply for the switching currents, high voltages can be experienced at the winding high end. This energy manifests itself as excessive voltages and these are required to be kept away from the device supply. AN 36 - 8 Applications Note AN36 Issue1 - JULY 2002 Figure 9 MOSFET Output Drive Stage Figure 10 MOSFET Output Drive Stage Using Active Clamping. |
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