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32C82 Datasheet(PDF) 75 Page - Renesas Technology Corp |
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32C82 Datasheet(HTML) 75 Page - Renesas Technology Corp |
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75 / 82 page ![]() 0 8 f o 4 0 0 2 , 1 0 . n u J 0 2 . 1 . v e R page 75 p u o r G 2 8 / C 2 3 M 5. Electrical Characteristics (VCC = 3.3V) BCLK DW DB MAi Vcc=3.3V RAS CASL CASH Hi-Z th(BCLK-DB) -7ns.min 18ns.max th(BCLK-CAD) 0ns.min tcyc td(BCLK-RAD) th(BCLK-RAD) 0ns.min 18ns.max td(BCLK-CAD) 18ns.max td(BCLK-RAS) 18ns.max td(BCLK-CAS) tRP(1) 18ns.max td(BCLK-DW) tsu(DB-CAS)(1) th(BCLK-RAS) 0ns.min th(BCLK-CAS) -3ns.min th(BCLK-DW) 0ns.min Row address Column address NOTES: 1. It varies with the operation frequency. th(RAS-RAD)=(tcyc/2-13)ns.min tRP=(tcyc/2 x 3-20)ns.min tsu(DB-CAS)=(tcyc-20)ns.min Measurement conditions • VCC=3.0 to 3.6V • Input high and low voltage: VIH=1.5V, VIL=0.5V • Output high and low voltage: VOH=1.5V, VOL=1.5V Write timing Memory expansion mode and microprocessor mode (With 2 wait states, when accessing the DRAM area) th(RAS-RAD)(1) Figure 5.14 VCC=3.3V Timing Diagram (5) |
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