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H83069RF Datasheet(PDF) 182 Page - Renesas Technology Corp |
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H83069RF Datasheet(HTML) 182 Page - Renesas Technology Corp |
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182 / 1003 page ![]() Rev. 5.0, 09/04, page 160 of 978 φ A23 to A0 CSn (RAS) AS Tp1 Tr Tc1 ( UCAS /LCAS) PB4 /PB5 RD(WE) D15 to D0 RD(WE) D15 to D0 ( UCAS /LCAS) PB4 /PB5 Tc2 Tp2 Note: n = 2 to 5 Row High level High level Column Read access Write access Figure 6.19 Timing with Two Precharge States (CSEL = 0 in DRCRB) 6.5.8 Wait Control In a DRAM access cycle, wait states can be inserted (1) between the T r state and Tc1 state, and (2) between the T c1 state and Tc2 state. Insertion of T rw Wait State between Tr and Tc1: One Trw state can be inserted between T r and Tc1 by setting the RCW bit to 1 in DRCRB. Insertion of T w Wait State(s) between Tc1 and Tc2: When the bit in ASTCR corresponding to an area designated as DRAM space is set to 1, from 0 to 3 wait states can be inserted between the T c1 state and T c2 state by means of settings in WCRH and WCRL. Figure 6.20 shows an example of the timing for wait state insertion. |
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