Electronic Components Datasheet Search
  English  ▼

X  

LTC1960 Datasheet(PDF) 21 Page - Linear Technology

Part # LTC1960
Description  Dual Battery Charger/Selector with SPI Interface
PDF  24 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  LINER [Linear Technology]
Direct Link  http://www.linear.com
Logo LINER - Linear Technology

LTC1960 Datasheet(HTML) 21 Page - Linear Technology

Back Button LTC1960 Datasheet HTML 16Page - Linear Technology LTC1960 Datasheet HTML 17Page - Linear Technology LTC1960 Datasheet HTML 18Page - Linear Technology LTC1960 Datasheet HTML 19Page - Linear Technology LTC1960 Datasheet HTML 20Page - Linear Technology LTC1960 Datasheet HTML 21Page - Linear Technology LTC1960 Datasheet HTML 22Page - Linear Technology LTC1960 Datasheet HTML 23Page - Linear Technology LTC1960 Datasheet HTML 24Page - Linear Technology  
Zoom Inzoom in Zoom Outzoom out
 21 / 24 page
background image
LTC1960
21
1960fa
switching frequency. Switching ripple current splits be-
tween the battery and the output capacitor depending on
the ESR of the output capacitor and the battery imped-
ance. If the ESR of COUTis 0.2Ω and the battery impedance
is raised to 4
Ω with a bead or inductor, only 5% of the
current ripple will flow in the battery.
Power Path and Charge MUX MOSFET Selection
Three pairs of P-channel MOSFETs must be used with the
wall adapter and the two battery discharge paths. Two
pairs of N-channel MOSFETs must be used with the
battery charge path. The nominal gate drive levels are set
by the clamp drive voltage of their respective control
circuitry. This voltage is typically 6.25V. Consequently,
logic-level threshold MOSFETs must be used. Pay close
attention to the BVDSS specification for the MOSFETs as
well; many of the logic level MOSFETs are limited to 30V
or less.
Selection criteria for the power MOSFETs include the “ON”
resistance RDS(ON), input voltage and maximum output
current. For the N-channel charge path, the maximum
current is the maximum programmed current to be used.
For the P-channel discharge path maximum current typi-
cally occurs at end of life of the battery when using only
one battery. The upper limit of RDS(ON) value is a function
of the
actual power dissipation capability of a given
MOSFET package that must take into account the PCB
layout. As a starting point, without knowing what the PCB
dissipation capability would be, derate the package power
rating by a factor of two.
R
P
I
DS ON MAX
MOSFET
MAX
()
=
()
2
2
If you are using a dual MOSFET package with both MOSFETs
in series, you must cut the package power rating in half
again and recalculate.
R
P
I
DS ON MAX
MOSFETDUAL
MAX
()
=
()
4
2
APPLICATIONS INFORMATION
If you use identical MOSFETs for both battery paths,
voltage drops will track over a wide current range. The
LTC1960 linear 25mV CV drop regulation will not occur
until the current has dropped below:
I
mV
R
LINEARMAX
DS ON MAX
=
25
2
()
However, if you try to use the above equation to determine
RDS(ON) to force linear mode at full current, the MOSFET
RDS(ON) value becomes unreasonably low for MOSFETs
available at this time. The need for the LTC1960 voltage
drop regulation only comes into play for parallel battery
configurations that terminate charge or discharge using
voltage. At first this seems to be a problem, but there are
several factors helping out:
1. When batteries are in parallel current sharing, the
current flow through any one battery is less than if it is
running stand-alone.
2. Most batteries that charge in constant voltage mode,
such as Li-ion, charge terminate at a current value of
C/10 or less which is well within the linear operation
range of the MOSFETs.
3. Voltage tracking for the discharge process does not
need such precise voltage tracking values.
The LTC1960 has two transient conditions that force the
discharge path P-channel MOSFETs to have two additional
parameters to consider. The parameters are gate charge
QGATE and single pulse power capability.
When the LTC1960 senses a LOW_POWER event, all the
P-channel MOSFETs are turned on simultaneously to
allow voltage recovery due to a loss of a given power
source. However, there is a delay in the time it takes to turn
on all the MOSFETs. Slow MOSFETs will require more bulk
capacitance to hold up all the system’s power supply
function during the transition and fast MOSFET will require
less bulk capacitance. The transition speed of a MOSFET
to an on or off state is a direct function of the MOSFET gate
charge.
t = QGATE/IDRIVE



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com