TC213

1024-

× 512-PIXEL CCD IMAGE SENSOR

SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991

2-2

POST OFFICE BOX 655303

description (continued)

Gated floating-diffusion detection structures are used with each serial register to convert charge to signal

voltage. External resets allow the application of off-chip correlated clamp sample-and-hold amplifiers for

low-noise performance. To provide high output-drive capability, both outputs are buffered by low-noise,

two-stage, source-follower amplifiers. These two output signals can provide a data rate of 20 megapixels per

second when combined off chip. An output of 30 frames per second with one field per frame is typical. At room

temperature, the readout noise is 55 elecrons and a minimum dynamic range of 60 dB is available.

The blooming protection incorporated into the sensor is based on recombining excess charge with charge of

opposite polarity in the substrate. This antiblooming is activated by supplying clocking pulses to the

antiblooming gate, which is an integral part of each image-sensing element. The storage area antiblooming gate

is clocked only for charge transfer in normal use.

The TC213 is built using TI-proprietary virtual-phase technology, which provides devices with high blue

response, low dark signal, good uniformity, and single-phase clocking.

The TC213 is characterized for operation from –10

°C to 40°C.

functional block diagram

24 Dark Reference Elements

Clearing Drain

Amplifiers

OUT1

OUT2

RST2

IAG

TDB

19

21

6

3

1

2

AMP GND

CDB

8

SRG2

SRG1

TRG

IDB

11

9

10

ABGS

13

SAG

ABGI

14

15

Blooming Protection

Image Area With

Top Drain

12 Dummy

Elements

Multiplexer, Transfer Gates,

and Serial Registers

12

IAG

16

ADB

4

ABGI

22

RST1

7

SAG

23

ABGS

24

Storage Area